Ryohei Baba

Normally-off AlGaN/GaN HFETs using NiOx gate with recess

Osamu Machida, Nobuo Kaneko, Masataka Yanagihara, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

電源用AlGaN/GaN FETの開発

Osamu Machida, Koji Yano, Nobuo Kaneko, 2010 .

Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

Nobuo Kaneko, Masataka Yanagihara, Shinichi Iwakami, 2007 .