J.D. Black

发表

On-Chip Characterization of Single-Event Transient Pulsewidths

B. Narasimham, W. T. Holman, V. Ramachandran, 2006, IEEE Transactions on Device and Materials Reliability.

Quantifying the Reduction in Collected Charge and Soft Errors in the Presence of Guard Rings

B. Narasimham, A.F. Witulski, W.T. Holman, 2008, IEEE Transactions on Device and Materials Reliability.

Total dose evaluation of state-of-the-art commercial analog to digital converters for space-based imaging applications

J.D. Black, P.H. Eaton, J.R. Chavez, 1998, 1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385).

Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing

A.F. Witulski, L.W. Massengill, J.D. Black, 2008, IEEE Transactions on Device and Materials Reliability.

Quantifying the Effectiveness of Guard Bands in Reducing the Collected Charge Leading to Soft Errors

B. Narasimham, A.F. Witulski, W.T. Holman, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

HBD layout isolation techniques for multiple node charge collection mitigation

A.F. Witulski, L.W. Massengill, J.D. Black, 2005, IEEE Transactions on Nuclear Science.

Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop

R.A. Reed, R.D. Schrimpf, L.W. Massengill, 2009, IEEE Transactions on Nuclear Science.

RHBD techniques for mitigating effects of single-event hits using guard-gates

B.L. Bhuva, L.W. Massengill, J.D. Black, 2005, IEEE Transactions on Nuclear Science.

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

B.L. Bhuva, A.F. Witulski, L.W. Massengill, 2006, IEEE Transactions on Nuclear Science.

HBD using cascode-Voltage switch logic gates for SET tolerant digital designs

B.L. Bhuva, L.W. Massengill, J.D. Black, 2005, IEEE Transactions on Nuclear Science.

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

R.A. Reed, R.D. Schrimpf, J.D. Black, 2008, IEEE Transactions on Nuclear Science.

Soft-Error Charge-Sharing Mechanisms at Sub-100nm Technology Nodes

A.F. Witulski, L.W. Massengill, J.D. Black, 2007, 2007 IEEE International Conference on Integrated Circuit Design and Technology.

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

B. Narasimham, W. T. Holman, B.L. Bhuva, 2007, IEEE Transactions on Nuclear Science.

Single-Event Tolerant Latch Using Cascode-Voltage Switch Logic Gates

B.L. Bhuva, A.F. Witulski, L.W. Massengill, 2006, IEEE Transactions on Nuclear Science.

Soft Error Considerations for Multicore Microprocessor Design

B.L. Bhuva, R.D. Schrimpf, L.W. Massengill, 2007, 2007 IEEE International Conference on Integrated Circuit Design and Technology.

Single Event Upsets in a 130 nm Hardened Latch Design Due to Charge Sharing

A.F. Witulski, L.W. Massengill, J.D. Black, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

C-CREST Technique for Combinational Logic SET Testing

R.A. Reed, B.L. Bhuva, L.W. Massengill, 2008, IEEE Transactions on Nuclear Science.

Mitigation techniques for single event induced charge sharing in a 90 nm bulk CMOS process

B.L. Bhuva, J.D. Black, O.A. Amusan, 2008, 2008 IEEE International Reliability Physics Symposium.

Pulsed Laser Single-Event Effects in Highly Scaled CMOS Technologies in the Presence of Dense Metal Coverage

M. Gaillardin, B.L. Bhuva, J.D. Black, 2008, IEEE Transactions on Nuclear Science.

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

H.S. Kim, J.D. Black, A.D. Tipton, 2008, IEEE Transactions on Nuclear Science.

The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments

J.D. Black, peixiong zhao, R. Reed, 2007, IEEE Transactions on Nuclear Science.