Taro Nishiguchi

Lifetime estimation of SiC MOSFETs under high temperature reverse bias test

Hirofumi Yamamoto, Kosuke Uchida, Toru Hiyoshi, 2016, Microelectron. Reliab..

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Kosuke Uchida, Shinji Matsukawa, Toru Hiyoshi, 2016 .

Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Koji Nishio, Mitsuhiro Nakamura, Taro Nishiguchi, 2004 .