Seiji Kawata

Effects of GaAs-substrate surface misorientation from (001) on band-gap energy in Ga0.5Inw0.5P

Hitoshi Hotta, Akiko Gomyo, T. Suzuki, 1994 .

Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes

Tohru Suzuki, Hitoshi Hotta, Akiko Gomyo, 1988, Photonics West - Lasers and Applications in Science and Engineering.

Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering

Akiko Gomyo, Yoshiyasu Ueno, Seiji Kawata, 1990 .

Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga0.5In0.5P Grown on (001) GaAs Substrates

Akiko Gomyo, Seiji Kawata, Isao Hino, 1989 .

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

Kohroh Kobayashi, Tetsuhiro Suzuki, Akiko Gomyo, 1987 .

AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

Kohroh Kobayashi, Akiko Gomyo, Seiji Kawata, 1987 .

Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

Kohroh Kobayashi, Akiko Gomyo, Seiji Kawata, 1985 .

Aging characteristics of AlGaInP/GaInP visible-light lasers (λL = 678 nm)

Kohroh Kobayashi, Tetsuhiro Suzuki, Akiko Gomyo, 1987 .