S. C. Chen

High Magnetization Exchange Coupled TM-TbCo/RE-TbCo Double Layer

Po-Cheng Kuo, C. T. Kuo, Y. H. Fang, 2007 .

A reliable TDDB lifetime Projection model for advanced gate stack

K. Wu, Y.-H Lee, J. R. Shih, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

Effect of Co Underlayer on the Magnetic Properties and Microstructures of TbCo Films

Po-Cheng Kuo, Y. H. Fang, S. C. Chen, 2007 .

A junction leakage mechanism and its effects on advance SRAM failure

J. H. Lee, S. C. Chen, J. Shih, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

The physical mechanism investigation between HK/IL gate stack breakdown and time-dependent oxygen vacancy trap generation in FinFET devices

S. C. Chen, R. Lu, Y. Lee, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

The physical mechanism investigation of AC TDDB behavior in advanced gate stack

S. C. Chen, C. L. Chen, J. Shih, 2014, 2014 IEEE International Reliability Physics Symposium.

AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology

J. H. Lee, S. C. Chen, Jun He, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs

S. Mukhopadhyay, Jun He, Y. S. Tsai, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

The physical explanation of TDDB power law lifetime model through oxygen vacancy trap investigations in HKMG NMOS FinFET devices

S. C. Chen, S. C. Chen, R. Lu, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).