Wook-Ghee Hahn

A new GIDL phenomenon by field effect of neighboring cell transistors and its control solutions in sub-30 nm NAND flash devices

Il Han Park, Wook-Ghee Hahn, Ki-Whan Song, 2012, 2012 Symposium on VLSI Technology (VLSIT).

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

Wook-Ghee Hahn, Hyun Wook Park, Jeong-Don Ihm, 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology

Byung-Gil Jeon, Wook-Ghee Hahn, Ki-Whan Song, 2012, 2012 IEEE International Solid-State Circuits Conference.

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Wook-Ghee Hahn, Hyun Wook Park, Jeong-Don Ihm, 2016, IEEE Journal of Solid-State Circuits.

13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

Kyungmin Kim, Wook-Ghee Hahn, Ki-Whan Song, 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

Myounggon Kang, Hyungcheol Shin, Wook-Ghee Hahn, 2011 .