S. L. Li

The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

Jin Zhang, C. Q. Chen, H. Xiong, 2011, Other Conferences.

The effects of growth temperature of the pulse atomic layer epitaxy AlN films grown on sapphire by MOCVD

C. Q. Chen, Y.-Y. Fang, H. Xiong, 2011, Other Conferences.

Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

S. L. Li, H. Miyazaki, K. Tsukagoshi, 2012, Scientific Reports.

Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

S. L. Li, C. Chen, Y. Tian, 2013 .

Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition

S. L. Li, C. Chen, C. -. Yu, 2012 .

Important factors affectingJc in bulk YBa2Cu3O7 − δ

S. L. Li, L. Li, J. Zhang, 1991 .

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

S. L. Li, Liang Gao, K. Tsukagoshi, 2013, Nanoscale.