E. Robilliart

Nonquasistatic transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

E. Dubois, E. Robilliart, 2002, IEEE Electron Device Letters.

Physical MOSFET's model for analog circuit design: application to current copier based architectures

E. Robilliart, E. Dubois, 1996, 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.

Body effect induced wear-out acceleration in ultra-thin oxides

David Roy, Gérard Ghibaudo, E. Vincent, 2001, Microelectron. Reliab..

Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

G. Reimbold, G. Ghibaudo, S. Orain, 2004, IEEE Transactions on Electron Devices.

Investigations of stress sensitivity of 0.12 CMOS technology using process modeling

V. Senez, G. Carnevale, H. Jaouen, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Impact of the lateral source/drain abruptness on MOSFET characteristics and transport properties

T. Skotnicki, A. Pouydebasque, H. Jaouen, 2003, IEEE International Electron Devices Meeting 2003.