Jordi Suñé

发表

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Enrique Miranda, Jordi Suñé, E. Miranda, 2020, Materials.

Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

Jordi Suñé, Ernest Y. Wu, E. Wu, 2005, Microelectron. Reliab..

Statistics of soft and hard breakdown in thin SiO2 gate oxides

Jordi Suñé, Ernest Y. Wu, David Jiménez, 2003, Microelectron. Reliab..

Breakdown of thin gate silicon dioxide films—A review

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1996 .

Field-effect control of breakdown paths in HfO2 based MIM structures

Jordi Suñé, Francesca Campabadal, Enrique Miranda, 2013, Microelectron. Reliab..

A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

Jordi Suñé, Enrique Miranda, A. Rodriguez-Fernandez, 2018, Microelectron. Reliab..

Fundamentals and SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Jordi Suñé, Enrique Miranda, E. Miranda, 2020 .

Electron transport through broken down ultra-thin SiO2 layers in MOS devices

Jordi Suñé, Enrique Miranda, E. Miranda, 2004, Microelectron. Reliab..

BREAKDOWN MODES AND BREAKDOWN STATISTICS OF ULTRATHIN SiO2 GATE OXIDES

Jordi Suñé, Enrique Miranda, David Jiménez, 2001 .

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

Jordi Suñé, Enrique Miranda, German Agustin Patterson, 2018, Int. J. Circuit Theory Appl..

Advanced electrical-level modeling of EEPROM cells

Jordi Suñé, M. Lanzoni, Piero Olivo, 1993 .

Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack

Jordi Suñé, David Jiménez, Ferney A. Chaves, 2012 .

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress

Jordi Suñé, Enrique Miranda, Paul K. Hurley, 2013, Microelectron. Reliab..

Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates

Jordi Suñé, Francesca Campabadal, M. B. González, 2015, Microelectron. Reliab..

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown

Jordi Suñé, Hiroshi Iwai, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1998 .

Equivalent circuit model for the electron transport in 2D resistive switching material systems

Jordi Suñé, Enrique Miranda, C. Pan, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Nagarajan Raghavan, Jordi Suñé, H.-S. Philip Wong, 2018, Advanced Electronic Materials.

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

Enrique Miranda, Jordi Suñé, Agustín Cisternas Ferri, 2019, Materials.

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

Jordi Suñé, Edward J. Nowak, Ernest Y. Wu, 2002 .

Critical reliability challenges in scaling SiO2-based dielectric to its limit

Jordi Suñé, Edward J. Nowak, Ernest Y. Wu, 2003, Microelectron. Reliab..

Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects

Jordi Suñé, Enrique Miranda, J. Blasco, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis

Jordi Suñé, Enrique Miranda, Luca Perniola, 2017, Microelectron. Reliab..

Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

Jordi Suñé, Héctor García, Enrique Miranda, 2014, Microelectron. Reliab..

Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets

Jordi Suñé, Xavier Oriols, 2001, VLSI Design.

Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects

Jordi Suñé, Enrique Miranda, J. Muñoz-Gorriz, 2019 .

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

Enrique Miranda, Jordi Suñé, Fernando Leonel Aguirre, 2020, IEEE Access.

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films

Jordi Suñé, Nestor Fabian Ghenzi, Enrique Miranda, 2015, Microelectron. Reliab..

Detection and fitting of the soft breakdown failure mode in MOS structures

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

Statistical analysis of “Tail Bits” phenomena with defect clustering in RESET switching process of RRAM devices

Jordi Suñé, Meiyun Zhang, Yu Li, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

A simple, robust, and accurate compact model for a wide variety of complementary resistive switching devices

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2021 .

Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

Jordi Suñé, Enrique Miranda, Felix Palumbo, 2021, Journal of Low Power Electronics and Applications.

Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition

Jordi Suñé, Enrique Miranda, Felix Palumbo, 2021, 2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS).

Temperature dependence of Fowler-Nordheim injection from accumulated n-type silicon into silicon dioxide

Jordi Suñé, Piero Olivo, M. Lanzoni, 1993 .

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides

Jordi Suñé, Ernest Y. Wu, Edward J. Nowak, 2001 .

Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures

Jordi Suñé, Nuria Barniol, X. Aymerich, 1989 .

Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides

Jordi Suñé, Ernest Y. Wu, Edward J. Nowak, 2002 .

Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides

Jordi Suñé, Ernest Y. Wu, E. Wu, 2001 .

Two-step stress methodology for monitoring the gate oxide degradation in MOS devices

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2001 .

Reversible dielectric breakdown of thin gate oxides in MOS devices

Jordi Suñé, Xavier Aymerich, Montserrat Nafria, 1993 .

Quantitative two-step hydrogen model of SiO2 gate oxide breakdown

Jordi Suñé, Ernest Y. Wu, E. Wu, 2002 .

Nondestructive multiple breakdown events in very thin SiO2 films

Jordi Suñé, Xavier Aymerich, Nuria Barniol, 1989 .

Soft breakdown fluctuation events in ultrathin SiO2 layers

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1998 .

Linear and non-linear conduction regimes in broken down gate oxides

Jordi Suñé, Enrique Miranda, Xavier Oriols, 2001 .

Conduction properties of breakdown paths in ultrathin gate oxides

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

Mesoscopic approach to the soft breakdown failure mode in ultrathin SiO2 films

Jordi Suñé, Enrique Miranda, E. Miranda, 2001 .

Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

Analysis of the degradation and breakdown of thin SiO/sub 2/ films under static and dynamic tests using a two-step stress procedure

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures

Jordi Suñé, Fernanda Irrera, P. Lorenzi, 2015 .

Physics-Based Percolation Model of Oxide Breakdown

Jordi Suñé, Ernest Y. Wu, Santi Tous, 2007 .

$${ SIM}^2{ RRAM}$$SIM2RRAM: a physical model for RRAM devices simulation

Jordi Suñé, Mario Lanza, Enrique Miranda, 2017 .

Modeling of the switching I-V characteristics in ultrathin (5 nm) atomic layer deposited HfO2 films using the logistic hysteron

Jordi Suñé, Enrique Miranda, Karol Fröhlich, 2015 .

Simulation of thermal reset transitions in resistive switching memories including quantum effects

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2014 .

Modeling the breakdown spots in silicon dioxide films as point contacts

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions

Jordi Suñé, Ernest Y. Wu, E. Wu, 2002 .

An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2015 .

Gate stack insulator breakdown when the interface layer thickness is scaled toward zero

Jordi Suñé, Enrique Miranda, E. Miranda, 2010 .

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

Jordi Suñé, Enrique Miranda, P. Levy, 2017 .

Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfaces

Jordi Suñé, Piero Olivo, Bruno Ricco, 1991 .

Frequency dependence of degradation and breakdown of thin SiO2 films

Jordi Suñé, X. Aymerich, Montserrat Nafria, 1995 .

Limits of the successive breakdown statistics to assess chip reliability

Jordi Suñé, Ernest Y. Wu, Wing L. Lai, 2004 .

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Yang Li, Tianchun Ye, Jordi Suñé, 2015 .

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Jordi Suñé, Ernest Y. Wu, Timothy D. Sullivan, 2009 .

Trapped charge distributions in thin (10 nm) SiO/sub 2/ films subjected to static and dynamic stresses

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1998 .

Degradation and Breakdown of Gate Oxides in VLSI Devices

Jordi Suñé, Nuria Barniol, X. Aymerich, 1989, February 16.

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Jordi Suñé, Francesca Campabadal, Xavier Aymerich, 2000 .

Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology

Jordi Suñé, Hangbing Lv, Shibing Long, 2013 .

Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2001 .

Set Voltage Statistics in Unipolar HfO2-Based RRAM

Jordi Suñé, Hangbing Lv, Shibing Long, 2012 .

Switching events in the soft breakdown I–t characteristic of ultra-thin SiO2 layers

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

Modeling the breakdown statistics of Al 2 O 3 /HfO 2 nanolaminates grown by atomic-layer-deposition

Jordi Suñé, Francesca Campabadal, Enrique Miranda, 2011 .

Conductance Quantization in Resistive Random Access Memory

Jordi Suñé, Yang Liu, Yang Li, 2015, Nanoscale Research Letters.

Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics

Jordi Suñé, Ernest Y. Wu, 2005 .

Failure physics of ultra-thin SiO2 gate oxides near their scaling limit

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1993 .

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Jordi Suñé, Shibing Long, Ming Liu, 2013, Scientific Reports.

Soft Breakdown in Ultrathin SiO2 Layers: the Conduction Problem from a New Point of View

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

Jordi Suñé, Francisco Jimenez-Molinos, Juan Bautista Roldán, 2018 .

High field dynamic stress of thin SiO2 films

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1995 .

Post-radiation-induced soft breakdown conduction properties as a function of temperature

Jordi Suñé, Alessandro Paccagnella, Enrique Miranda, 2001 .

Monitoring the degradation that causes the breakdown of ultrathin ( 2 gate oxides

Jordi Suñé, Xavier Aymerich, M. Nafria, 2000 .

On the breakdown statistics of very thin SiO2 films

Jordi Suñé, Nuria Barniol, X. Aymerich, 1990 .

A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach

Jordi Suñé, G. Gonzalez-Cordero, Francisco Jimenez-Molinos, 2016 .

Modeling the conduction characteristics of broken down gate oxides in MOS structures

Jordi Suñé, J. Suñé, E. Mirand, 2000 .

Characterization of SiO/sub 2/ dielectric breakdown for reliability simulation

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1993 .

Degradation and breakdown of thin silicon dioxide films under dynamic electrical stress

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1996 .

Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Jordi Suñé, Francesca Campabadal, Shibing Long, 2012 .

Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2015 .

Quantum effects in accumulated MOS thin dielectric structures

Jordi Suñé, Piero Olivo, P. Olivo, 1994 .

QUANTUM MONTE CARLO SIMULATION OF RESONANT TUNNELING DIODES BASED ON THE WIGNER DISTRIBUTION FUNCTION FORMALISM

Jordi Suñé, Joan Garcia-Garcia, Xavier Oriols, 1998 .

After-breakdown conduction through ultrathin SiO2 films in metal/insulator/semiconductor structures

Jordi Suñé, X. Aymerich, E. Farrés, 1991 .

Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

Jordi Suñé, Ernest Y. Wu, E. Wu, 2013 .