A. Brunnschweiler
发表
W. Fang,
A. Brunnschweiler,
Peter Ashburn,
1990
.
A. Brunnschweiler,
A. A. Rezazadeh,
Eng Fong Chor,
1988
.
W. Fang,
A. Brunnschweiler,
P. Ashburn,
1992
.
A. Brunnschweiler,
P R Routley,
Peter Ashburn,
1994
.
A. Brunnschweiler,
1985
.
A. Brunnschweiler,
1991
.
Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 0.1 MGy capability
A. Brunnschweiler,
G. Ensell,
R. Harris,
1993,
ESSDERC '93: 23rd European solid State Device Research Conference.
A. Brunnschweiler,
P. Ashburn,
Eng Fong Chor,
1988
.
A. Brunnschweiler,
Peter Ashburn,
P R Routley,
1993
.
A. Brunnschweiler,
P. Ashburn,
A. Brunnschweiler,
1985,
IEEE Electron Device Letters.