A. Martinez

Advanced simulation of statistical variability and reliability in nano CMOS transistors

B. Cheng, S. Roy, A. Asenov, 2008, 2008 IEEE International Electron Devices Meeting.

3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

A. Martinez, M. Aldegunde, A.J. Garcia-Loureiro, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations

A. Martinez, M. Aldegunde, J. R. Barker, 2012, IEEE Electron Device Letters.

The Impact of Random Dopant Aggregation in Source and Drain on the Performance of Ballistic DG Nano-MOSFETs: A NEGF Study

A. Asenov, A. Martinez, A. Svizhenko, 2007, IEEE Transactions on Nanotechnology.

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

A. Asenov, N. Seoane, A. Martinez, 2011, IEEE Transactions on Electron Devices.

A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET

A. Asenov, Natalia Seoane, A. Martinez, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Development of a Full 3D NEGF Nano-CMOS Simulator

A. Asenov, A. Martinez, A. Svizhenko, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

A. Asenov, N. Seoane, A. Martinez, 2009, IEEE Transactions on Electron Devices.