R. Hayami
发表
40 GHz 7.9 mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs
K. Washio,
R. Hayami,
2002
.
K. Ohhata,
Masao Kondo,
Katsuyoshi Washio,
2002
.
Katsuyoshi Washio,
Hiromi Shimamoto,
Makoto Miura,
2003
.
Toru Masuda,
Katsuyoshi Washio,
M. Tanabe,
2003
.
K. Washio,
M. Tanabe,
H. Shimamoto,
2000,
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
K. Washio,
T. Hashimoto,
A. Kodama,
2002,
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
K. Ohhata,
T. Masuda,
N. Shiramizu,
2001,
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
K. Washio,
M. Tanabe,
Y. Kiyota,
2000,
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
Katsuyoshi Washio,
M. Tanabe,
Hiromi Shimamoto,
2001
.
Katsuyoshi Washio,
M. Tanabe,
Hiromi Shimamoto,
2000
.
Katsuyoshi Washio,
M. Tanabe,
Eiji Ohue,
2001
.
T. Masuda,
N. Shiramizu,
K. Washio,
2000,
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
K. Ohhata,
T. Masuda,
N. Shiramizu,
2005,
IEEE Journal of Solid-State Circuits.