Jeong Yeol Choi

发表

CMOS LDD process with seven masking steps from well to passivation

Jeong Yeol Choi, Chung Jen Chien, Chung Chyung Han, 1995, Advanced Lithography.

Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing

Jeong Yeol Choi, James Shih, Patrick Lo, 1999, Advanced Lithography.

0.18-μm gate length CMOS devices with N+ polycide gate for 2.5-V application

Jeong Yeol Choi, Chung Chyung Han, Eric Zhang, 1997, Advanced Lithography.

Lg=0.25-um CMOS devices with N+-polycide gate for 3.3-V application

Jeong Yeol Choi, Zhijian Ma, 1996, Advanced Lithography.

Scaling considerations of interpoly oxide-nitride-oxide dielectric for high-density DRAM applications

Jeong Yeol Choi, Chuen-Der Lien, Zhijian Ma, 1996, Advanced Lithography.

Integrity of N2O oxides in WSi2 polycide process

Guo-Qiang Lo, Jeong Yeol Choi, Chung Jen Chien, 1995, Advanced Lithography.

Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface traps

Jeong Yeol Choi, Ping Keung Ko, Chenming Hu, 1989 .

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

Ping-Keung Ko, Jeong Yeol Choi, Chenming Hu, 1986 .

Simulation of MOSFET lifetime under AC hot-electron stress

Jeong Yeol Choi, Chenming Hu, K. Seki, 1988 .