Juan G. Alzate

eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology

Fatih Hamzaoglu, Chris Connor, Jeff Hicks, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Dejan Markovic, Kang L. Wang, Kang L. Wang, 2015, IEEE Transactions on Magnetics.

Effect of the oxide layer on current-induced spin-orbit torques in Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures

Kang L. Wang, Mustafa Akyol, Pedram Khalili Amiri, 2015 .

Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling

Qi Hu, Jordan A. Katine, Kang L. Wang, 2015, IEEE Transactions on Magnetics.

Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

Ilya Krivorotov, Alexey A. Kovalev, Hui Zhao, 2011 .

Electric-field-induced thermally assisted switching of monodomain magnetic bits

Kang L. Wang, Juan G. Alzate, Pramey Upadhyaya, 2013 .

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures

Kang L. Wang, Mustafa Akyol, Pedram Khalili Amiri, 2015 .