J. L. Titus

发表

Power MOSFETs hardened for single event effects (SEE) in space

C. F. Wheatley, D. R. Carley, J. L. Titus, 1995, Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.

An improved stripe-cell SEGR hardened power MOSFET technology

M. W. Savage, C. F. Wheatley, J. L. Titus, 2001 .

Variations in SET pulse shapes in the LM124A and LM111

Lloyd W. Massengill, M. W. Savage, Andrew L. Sternberg, 2002, IEEE Radiation Effects Data Workshop.

SEGR: a unique failure mode for power mosfets in spacecraft

R. L. Pease, Kenneth F. Galloway, J. R. Brews, 1996 .

Characterization of SET response of the LM124A the LM111, and the LM6144

C. Poivey, J. L. Titus, T. Turflinger, 2003, 2003 IEEE Radiation Effects Data Workshop.

Single event gate rupture of power DMOS transistors

M. R. Pinto, M. A. Shibib, J. L. Titus, 1993, Proceedings of IEEE International Electron Devices Meeting.

Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)

R. L. Pease, L. Cohn, J. L. Titus, 1998 .

Characterization of a fully resonant, 1-MHz, 25-Watt, DC/DC converter fabricated in a rad-hard BiCMOS/high-voltage process

M. A. Shibib, J. L. Titus, J. C. Desko, 1995 .

Development of cosmic ray hardened power MOSFET's

C. F. Wheatley, J. L. Titus, J. Titus, 1989 .

The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping

J. R. Brews, R. D. Schrimpf, K. F. Galloway, 1996 .

A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-bas

C. Frank Wheatley, J. L. Titus, D. I. Burton, 2001 .

Enhanced low dose rate sensitivity (ELDRS) of linear circuits in a space environment

R. L. Pease, J. L. Titus, J. F. Krieg, 1999 .

SEGR response of a radiation-hardened power MOSFET technology

C. F. Wheatley, J. L. Titus, D. I. Burton, 1996 .

Effects of ionizing radiation on the noise properties of DMOS power transistors

Kenneth F. Galloway, Ronald D. Schrimpf, J. L. Titus, 1991 .

SEGR and SEB in n-channel power MOSFETs

Kenneth F. Galloway, J. R. Brews, Ronald D. Schrimpf, 1996 .

A conceptual model of a single-event gate-rupture in power MOSFETs

Kenneth F. Galloway, J. R. Brews, Ronald D. Schrimpf, 1993 .

Single-event gate rupture in vertical power MOSFETs; an original empirical expression

C. F. Wheatley, J. L. Titus, D. I. Burton, 1994 .

Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs

C. F. Wheatley, A. B. Campbell, J. L. Titus, 1998 .

Proton-induced dielectric breakdown of power MOSFETs

C. F. Wheatley, J. L. Titus, 1998 .

First observations of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MPTB experiment

R. L. Pease, T. L. Turflinger, A. B. Campbell, 1998 .

Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems

Kenneth A. LaBel, C. F. Wheatley, Robert A. Reed, 1999 .

Radiations hardening of a high voltage IC technology (BCDMOS)

J. L. Titus, J. C. Desko, M. N. Darwish, 1990 .

Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

R. L. Pease, Kenneth F. Galloway, J. R. Brews, 1995 .

Enhanced low dose rate sensitivity (ELDRS) in a voltage comparator which only utilizes complementary vertical NPN and PNP transistors

J. L. Titus, M. Gehlhausen, D. Platteter, 1999 .

Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

R. L. Pease, Kenneth F. Galloway, J. R. Brews, 1996 .

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

Kenneth F. Galloway, Ronald D. Schrimpf, C. F. Wheatley, 1996 .

Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution

C. F. Wheatley, J. L. Titus, T. H. Wheatley, 2001 .

(Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide

J. R. Brews, C. F. Wheatley, J. L. Titus, 1995 .

Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

C. F. Wheatley, J. L. Titus, J. Titus, 1996 .

Radiation effects on power integrated circuits

J. L. Titus, M. N. Darwish, M. Darwish, 1988 .

Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method

Kenneth A. LaBel, Jeffrey H. Warner, Megan C. Casey, 2011 .

Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]

K. A. LaBel, R. D. Schrimpf, C. F. Wheatley, 1996 .

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

K. A. LaBel, N. Goldsman, H. S. Kim, 2011, IEEE Transactions on Nuclear Science.