Neal R. Rueger

发表

Surface science issues in plasma etching

Marc Schaepkens, Gottlieb S. Oehrlein, Marcus F. Doemling, 1999, IBM J. Res. Dev..

Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas

Marcus F. Doemling, Neal R. Rueger, G. Oehrlein, 1996 .

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Marc Schaepkens, Gottlieb S. Oehrlein, N. R. Rueger, 1998 .

Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

Neal R. Rueger, T. Standaert, G. Oehrlein, 1999 .

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, Marcus F. Doemling, Neal R. Rueger, 1997 .

Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, Marcus F. Doemling, Neal R. Rueger, 1999 .

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

Marcus F. Doemling, Neal R. Rueger, T. Standaert, 1996 .

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si

Marc Schaepkens, Gottlieb S. Oehrlein, N. R. Rueger, 1998 .

Study of the SiO 2-toSi 3 N 4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO 2-toSi mechanism

Neal R. Rueger, T. Standaert, M. Schaepkens, 1998 .

Using a quartz crystal microbalance for low energy ion beam etching studies

Marcus F. Doemling, Neal R. Rueger, G. Oehrlein, 2000 .