Omar B. Mohammed

Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors

Sanjay K. Banerjee, Leonard F. Register, Omar B. Mohammed, 2019, 2019 Device Research Conference (DRC).

ReS2-based interlayer tunnel field effect transistor

Omar B. Mohammed, S. Banerjee, Kenji Watanabe, 2017 .