Jae-Hyun Ryou

发表

Long-wavelength VCSELs at Honeywell

Hoki Kwon, Ralph H. Johnson, Jim A. Tatum, 2003, SPIE OPTO.

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Theeradetch Detchprohm, Yuh-Shiuan Liu, Shyh-Chiang Shen, 2013 .

Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures

Russell D. Dupuis, Jae-Hyun Ryou, Seongjun Kim, 2013 .

Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors

Russell D. Dupuis, Yong Huang, Jae-Hyun Ryou, 2008 .

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Yuh-Shiuan Liu, Shyh-Chiang Shen, P. Douglas Yoder, 2013 .

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

Heqing Wang, Guangdi Shen, Russell D. Dupuis, 2008 .

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

David J. Smith, Russell D. Dupuis, Elizabeth H. Steenbergen, 2011 .

Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates

Shyh-Chiang Shen, Russell D. Dupuis, Xiaogang Bai, 2009, IEEE Photonics Technology Letters.

AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}$

Ashok K. Sood, Nibir K. Dhar, Theeradetch Detchprohm, 2015, IEEE Photonics Technology Letters.

Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

Federico Capasso, Russell D. Dupuis, Fernando Ponce, 2011 .

GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation

Shyh-Chiang Shen, Russell D. Dupuis, Jae-Hyun Ryou, 2008 .

Metalorganic chemical vapor deposition growth of high-quality InAs∕GaSb type II superlattices on (001) GaAs substrates

Russell D. Dupuis, Shin Mou, K. C. Hsieh, 2006 .

Photonic crystal disk lasers.

Marko Loncar, Yong Huang, Jae-Hyun Ryou, 2011, Optics letters.

Transistor laser with emission wavelength at 1544nm

Milton Feng, Russell D. Dupuis, Yong Huang, 2008 .

Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation

Russell D. Dupuis, Gabriel Walter, Nick Holonyak, 2001 .

Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

Shyh-Chiang Shen, Yi-Che Lee, Jae-Hyun Ryou, 2009, IEEE Electron Device Letters.

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes.

Joon Seop Kwak, Jae-Hyun Ryou, Keon Hwa Lee, 2015, Optics express.

Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

Edward A. Preble, Russell D. Dupuis, Fernando Ponce, 2008 .

Visible Light-Emitting Diodes With Thin-Film-Flip- Chip-Based Wafer-Level Chip-Scale Package Technology Using Anisotropic Conductive Film Bonding

Jae-Hyun Ryou, Keon Hwa Lee, Seung Hwan Kim, 2015, IEEE Electron Device Letters.

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Shyh-Chiang Shen, P. Douglas Yoder, Russell D. Dupuis, 2008 .

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

Theeradetch Detchprohm, Russell D. Dupuis, Min-Ki Kwon, 2014 .

Photonic crystal nanobeam lasers

Marko Loncar, Yong Huang, Jae-Hyun Ryou, 2010, CLEO/QELS: 2010 Laser Science to Photonic Applications.

GaN/InGaN avalanche phototransistors

Theeradetch Detchprohm, Shyh-Chiang Shen, Russell D. Dupuis, 2015 .

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

P. Douglas Yoder, Russell D. Dupuis, Fernando Ponce, 2010 .

Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition

Russell D. Dupuis, Robert Hull, Nick Holonyak, 2002 .

Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

Theeradetch Detchprohm, Russell D. Dupuis, Mi-Hee Ji, 2016 .

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

Russell D. Dupuis, Jae-Hyun Ryou, R. Dupuis, 2009 .

Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures

Russell D. Dupuis, Gabriel Walter, Nick Holonyak, 2001 .

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Russell D. Dupuis, Fernando Ponce, Mi-Hee Ji, 2012 .

Metal organic chemical vapor deposition of metaphorphic InAs GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications

Shun Lien Chuang, Russell D. Dupuis, K. C. Hsieh, 2006 .

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Jin Fan, Martin Mandl, Shun Lien Chuang, 2011 .

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Russell D. Dupuis, Fernando Ponce, Jeomoh Kim, 2010 .

Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes

Zachary Lochner, Youfan Hu, Chen Xu, 2010, Advanced materials.

Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides

Russell D. Dupuis, Jae-Hyun Ryou, Kyoung-Kook Kim, 2011 .

Bipolar III-N high-power electronic devices

Shyh-Chiang Shen, Russell D. Dupuis, Zachary Lochner, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

Wonseok Lee, Russell D. Dupuis, T. Chung, 2006 .

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)

Shyh-Chiang Shen, Russell D. Dupuis, Zachary Lochner, 2012 .

Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

Ashok K. Sood, Jay Lewis, Theeradetch Detchprohm, 2015 .

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Michael Wraback, Edward A. Preble, Shyh-Chiang Shen, 2006 .

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Joon Seop Kwak, Jie Chen, Dong Gyu Lee, 2017 .