Kyu-Hwan Shim

发表

RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition

Seung-Yun Lee, Bongki Mheen, Chan Woo Park, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

Hyung-Kee Seo, Kyu-Hwan Shim, A-Ram Choi, 2007 .

Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks

Kyu-Hwan Shim, Chel-Jong Choi, Hoon-Ki Lee, 2011, IEICE Trans. Electron..

Development of Semiconductor Bridge Ignition Chip Device with Robust ESD Protection of TVS Diodes

Kyu-Hwan Shim, Moon-Ho Lee, Vallivedu Janardhanam, 2018 .

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Kyu-Hwan Shim, Chel-Jong Choi, Deok-Ho Cho, 2014 .

Development of LC-type ESD/EMI filter based on TVS devices for peripheral device applications

Kyu-Hwan Shim, Young-Gi Kim, Chel-Jong Choi, 2012, The 1st IEEE Global Conference on Consumer Electronics 2012.

ESD robustness of low-voltage/high-speed TVS devices with epitaxial grown films

Jin Ho Lee, Kyu-Hwan Shim, Chel-Jong Choi, 2012, The 1st IEEE Global Conference on Consumer Electronics 2012.

A packaged. 2.3 GHz SiGe VCO with parallel-branch inductors

Seung-Yun Lee, Dongwoo Suh, Sang Hoon Kim, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Ultra low capacitance bidirectional transient voltage suppression device for the protection high speed data line from electrostatic discharge shocks

Kyu-Hwan Shim, Chel-Jong Choi, Deok-Ho Cho, 2014, The 18th IEEE International Symposium on Consumer Electronics (ISCE 2014).

Electrical and Structural Properties of W-Capped Er Ohmic Contact to n-Type in 0.53 Ga 0.47 As Channel

Min-Sung Kang, Kyu-Hwan Shim, Chel-Jong Choi, 2014 .

Current-voltage, S-parameter, LFN properties in T-R-T type ESD/EMI filters with TVS Zener diodes developed using epitaxy-based IPD technology

Kyu-Hwan Shim, Chel-Jong Choi, Deok-Ho Cho, 2012, Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012.

DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Si₀.₈₈Ge₀.₁₂(C) Heterostructure Channel

Kyu-Hwan Shim, Deok-Ho Cho, Tae-Hyun Han, 2006 .

Fabricated RC-Pi type ESD/EMI filter based on transient voltage suppression diode for portable electronic applications

Kyu-Hwan Shim, Chel-Jong Choi, Deok-Ho Cho, 2014, The 18th IEEE International Symposium on Consumer Electronics (ISCE 2014).

Effect of a SiO 2 Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors

김종희, Kyu-Hwan Shim, Munkhsaikhan Zumuukhorol, 2017 .

A 1.8 GHz SiGe HBT VCO using 0.5㎛ BiCMOS Process

Kyu-Hwan Shim, Seung-Hyeub Oh, Kyoung-Ik Cho, 2003 .

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Kyu-Hwan Shim, Yong Tae Kim, Chel-Jong Choi, 2015 .

Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films

Jin-Tae Kim, Gyungock Kim, Dongwoo Suh, 2008, IEICE Trans. Electron..

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel

Kyu-Hwan Shim, Yong-Woo Hwang, Jae-Yeon Kim, 2007, IEICE Trans. Electron..

Effects of Electrostatic Discharge Stress on Electrical Properties of Bidirectional TVS Zener Diode with Abrupt Junctions

Kyu-Hwan Shim, Chel-Jong Choi, Deok-Ho Cho, 2013 .

A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Kyu-Hwan Shim, Jong-Han Yang, Zagarzusem Khurelbaatar, 2014 .

Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs

Kyu-Hwan Shim, Jin-Young Kang, Jungwook Lim, 2002 .

1/f noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under Fowler-Nordheim stress

Kyu-Hwan Shim, Jong-In Song, Jin-Young Kang, 2003 .

Characteristics of germanium dry etching using inductively coupled SF6 plasma

Kyu-Hwan Shim, Yeon-Ho Kil, T. S. Jeong, 2012 .

Robust ESD protection for high brightness GaN LEDs using new TVS Zener diodes

Kyu-Hwan Shim, Deok-Ho Cho, Jong-Han Yang, 2011 .

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Kyu-Hwan Shim, Hyobong Hong, Vallivedu Janardhanam, 2010 .

The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors

Kyu-Hwan Shim, Jin-Yeong Kang, Seung-Yun Lee, 2001 .

Selective Chemical Wet Etching of Si 0.8 Ge 0.2 /Si Multilayer

Kyu-Hwan Shim, Jong-Han Yang, Yeon-Ho Kil, 2013 .

Bidirectional Transient Voltage Suppression Diodes for the Protection of High Speed Data Line from Electrostatic Discharge Shocks

Kyu-Hwan Shim, Chel-Jong Choi, Deok-Ho Cho, 2014 .

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

Kyu-Hwan Shim, A-Ram Choi, Deok-Ho Cho, 2008 .

Development of transient voltage suppressor device with abrupt junctions embedded by epitaxial growth technology

Kyu-Hwan Shim, Deok-Ho Cho, Sang-Sik Choi, 2009 .

Influence of substrate temperature and O2 flow on the properties of RF-magnetron-sputtered indium-tin-oxide thin films

Kyu-Hwan Shim, T. S. Jeong, Taek Sung Kim, 2007 .