Asen Asenov

发表

Complete Monte Carlo RF analysis of "real" short-channel compound FET's

Sharief F. Babiker, Asen Asenov, N. Cameron, 1998 .

Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction

Asen Asenov, B. Bindu, Binjie Cheng, 2010 .

Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F

Asen Asenov, N. Cameron, S. P. Beaumont, 1993 .

Advanced Simulation of RRAM Memory Cells

Asen Asenov, Toufik Sadi, Oves Badami, 2019, 2019 IEEE 13th International Conference on ASIC (ASICON).

TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs

Asen Asenov, Xingsheng Wang, Vihar P. Georgiev, 2017 .

Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions

Asen Asenov, Karol Kalna, 2004 .

Numerical study of the series resistances in deep-submicrometer recess gate MESFETs

Asen Asenov, S. P. Beaumont, John R. Barker, 1994 .

Variation-aware energy-delay optimization method for device/circuit co-design

Ru Huang, Asen Asenov, Lan Wei, 2015, 2015 China Semiconductor Technology International Conference.

An efficient data sampling strategy for statistical parameter extraction of nano-MOSFETs

Asen Asenov, B. Bindu, Binjie Cheng, 2008 .

Supporting statistical semiconductor device analysis using EGEE and OMII-UK middleware

Richard O. Sinnott, Asen Asenov, Scott Roy, 2008 .

NESS: new flexible Nano-Electronic Simulation Software

Asen Asenov, Vihar Georgiev, Meng Duan, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Asen Asenov, Guido Groeseneken, Ben Kaczer, 2014, IEEE Transactions on Electron Devices.

RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study

Asen Asenov, Fikru Adamu-Lema, Salvatore Maria Amoroso, 2013 .

TCAD based Design-Technology Co-Optimisations in advanced technology nodes

Asen Asenov, Karim El Sayed, Ricardo Borges, 2017, 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT).

Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM

Yong-Tae Kim, Sorin Cristoloveanu, Asen Asenov, 2017, IEEE Transactions on Electron Devices.

Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project

Richard O. Sinnott, Asen Asenov, Scott Roy, 2007 .

Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project

Richard O. Sinnott, Asen Asenov, Alan F. Murray, 2006 .

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Ru Huang, Asen Asenov, Runsheng Wang, 2016, IEEE Electron Device Letters.

An accurate compact modelling approach for statistical ageing and reliability

Asen Asenov, Campbell Millar, Jie Ding, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?

Asen Asenov, Scott Roy, Gareth Roy, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Modeling and Simulation of Statistical Variability in Nanometer CMOS Technologies

Asen Asenov, B. Cheng, 2011 .

A Methodology for Quantitatively Introducing ‘Atomistic’ Fluctuations into Compact Device Models for Circuit Analysis

Asen Asenov, Gareth Roy, Scott Roy, 2003 .

A 3D finite element parallel simulator for studying fluctuations in advanced MOSFETs

Asen Asenov, 2006 .

Simulation of statistical variability in nanometer scale CMOS devices

Asen Asenov, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

Asen Asenov, John R. Barker, Savas Kaya, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices

Asen Asenov, Robert W. Dutton, Siegfried Selberherr, 2007 .

Hierarchical variability-aware compact models of 20nm bulk CMOS

Asen Asenov, Liping Wang, Xingsheng Wang, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors

Asen Asenov, Oves Badami, Vihar P. Georgiev, 2019 .

Current variations in pHEMTs introduced by channel composition fluctuations

Asen Asenov, Antonio J. Garcia-Loureiro, Karol Kalna, 2006 .

Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond

Ru Huang, Asen Asenov, Runsheng Wang, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Simulation of geometry and surface effects in short gate length MESFETs and HEMTs

Sharief F. Babiker, Asen Asenov, N. Cameron, 1995 .

Multi-level simulations to support nanoCMOS electronics research

B. Harbulot, C. Davenhall, Richard O. Sinnott, 2009 .

TCAD Based Design Technology Co-Optimisation in Advanced CMOS Technology

Asen Asenov, 2018, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Evaluation of 35nm MOSFET capacitance components in PSP compact model

Asen Asenov, Binjie Cheng, Xingsheng Wang, 2010, 2010 18th Iranian Conference on Electrical Engineering.

Influence of Transistors With BTI-Induced Aging on SRAM Write Performance

Asen Asenov, Campbell Millar, Jie Ding, 2015, IEEE Transactions on Electron Devices.

A methodology for introducing atomistic parameter fluctutations into compact device models for circuit simulation

Asen Asenov, Gareth Roy, Scott Roy, 2003 .

New Assessment Methodology Based on Energy–Delay–Yield Cooptimization for Nanoscale CMOS Technology

Ru Huang, Asen Asenov, Lan Wei, 2015, IEEE Transactions on Electron Devices.

FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO

Asen Asenov, Binjie Cheng, Xingsheng Wang, 2015, IEEE Transactions on Electron Devices.

Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations

Asen Asenov, Scott Roy, B. Cheng, 2007 .

PDK development for 10nm III-V/Ge IFQW CMOS technology including statistical variability

Asen Asenov, Binjie Cheng, Craig Riddet, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Statistical Nano CMOS Variability and Its Impact on SRAM

Asen Asenov, 2010 .

A resource-oriented data management architecture for nanoCMOS electronics

B. Harbulot, C. Davenhall, Richard O. Sinnott, 2008 .

Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2006 .

Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid

Asen Asenov, John R. Barker, Scott Roy, 1995 .

Ballistic Quantum Simulators for Studying Variability in Nanotransistors

Asen Asenov, A. Svizhenko, John R. Barker, 2008 .

Reliability-Aware Statistical BSIM Compact Model Parameter Generation Methodology

Asen Asenov, Jie Ding, A. Asenov, 2020, IEEE Transactions on Electron Devices.

Monte Carlo simulation of nanotransistors and giga circuits on HPC

Asen Asenov, 2005 .

How can statistics methods help to address variability issues

Asen Asenov, Yoann Courant, Vassilios Gerousis, 2011 .

Invited) Process Variability for Devices at and Beyond the 7 nm Node

Asen Asenov, Sylvain Barraud, Mihail Nedjalkov, 2018 .

A general approach for multivariate statistical MOSFET compact modeling preserving correlations

Asen Asenov, Joachim Haase, Christoph Sohrmann, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Development of a parallel 3D finite element power semiconductor device simulator

Asen Asenov, John R. Barker, Scott Roy, 1995 .

Circuit-level modeling of FinFet sub-threshold slope and DIBL mismatch beyond 22nm

Asen Asenov, Paul Zuber, Binjie Cheng, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Design of a properly scaled 100 nm pseudomorphic HEMT using H2F

Asen Asenov, S. P. Beaumont, John R. Barker, 1995 .

Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements

Asen Asenov, Robert W. Dutton, Siegfried Selberherr, 2011 .

Transnational Teaching of Semiconductor Devices using Advanced TCAD Software

Asen Asenov, Rami Ghannam, Scott Roy, 2020 .

Investigation into effects of device variability on CMOS layout motifs

Asen Asenov, Binjie Cheng, David R. S. Cumming, 2008 .

Atomistic Simulation of Decanano MOSFETs

Asen Asenov, Savas Kaya, A. R. Brown, 2004 .

Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2015, IEEE Transactions on Electron Devices.

Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization

Sani R. Nassif, Asen Asenov, Binjie Cheng, 2015, IEEE Transactions on Electron Devices.

Enriched residual free bubbles for semiconductor device simulation

Asen Asenov, Stéphane Bordas, Robert Napier Simpson, 2012 .

Meeting the design challenges of nanoCMOS electronics through secure large-scale simulation and data management

B. Harbulot, Richard O. Sinnott, Asen Asenov, 2008 .

Statistical TCAD based PDK development for a FinFET technology at 14nm technology node

Asen Asenov, B. Cheng, Xingsheng Wang, 2012 .

Sub-25 nm UTB SOI SRAM cell under the influence of discrete random dopants

Asen Asenov, B. Cheng, Scott Roy, 2006 .

Variability-aware compact model strategy for 20-nm bulk MOSFETs

Asen Asenov, Liping Wang, Binjie Cheng, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Statistical-Variability Compact-Modeling for BSIM4 and PSP

Asen Asenov, Binjie Cheng, Gareth Roy, 2010 .

(Invited) Future perspectives of TCAD in the industry

Asen Asenov, Ricardo Borges, Victor Moroz, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Generic Aspects of Digital Circuit Behaviour In the Presence of Statistical Variability

Asen Asenov, Scott Roy, C. Millar, 2010 .

A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

Asen Asenov, Toufik Sadi, Vihar Georgiev, 2020, IEEE Transactions on Nanotechnology.

Data Management of nanometreScale CMOS Device Simulations

Richard O. Sinnott, G. Stewart, Asen Asenov, 2009 .

New insights into the near-threshold design in nanoscale FinFET technology for sub-0.2V applications

Ru Huang, Asen Asenov, Yuan Wang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit

Asen Asenov, Leroy Cronin, Vihar P. Georgiev, 2013 .

Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs

Asen Asenov, S. P. Beaumont, M.R.S. Taylor, 1994 .

Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues

Asen Asenov, Razaidi Hussin, Louis Gerrer, 2014, IEEE Transactions on Electron Devices.

Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

Asen Asenov, Binjie Cheng, Xingsheng Wang, 2013, IEEE Transactions on Electron Devices.

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Asen Asenov, Binjie Cheng, Xingsheng Wang, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Luca Selmi, Claire Fenouillet-Beranger, Asen Asenov, 2009 .

Meeting the design challenges of nano-CMOS electronics, design automation and test in Europe

Mark Zwolinski, Richard O. Sinnott, Asen Asenov, 2008 .

Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs

Sharief F. Babiker, Asen Asenov, N. Cameron, 1996 .

Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

Asen Asenov, Liping Wang, Xingsheng Wang, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Parallel semiconductor device simulation: from power to 'atomistic' devices

Asen Asenov, Scott Roy, A. R. Brown, 1998, 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).

Meeting the design challenges of nanoCMOS electronics

Mark Zwolinski, Richard O. Sinnott, Asen Asenov, 2007 .

Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

Asen Asenov, Binjie Cheng, Gareth Roy, 2005 .

InGaAs implant-free quantum-well MOSFETs: performanceevaluation using 3D Monte Carlo simulation

Asen Asenov, Ewan Towie, C. Riddet, 2012 .

Finite element Monte Carlo simulation of recess gate compound FFTs

Sharief F. Babiker, Asen Asenov, S. P. Beaumont, 1996 .

Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform

Asen Asenov, Jaehyun Lee, Oves Badami, 2020, Journal of Computational Electronics.

Reliability aware simulation flow: From TCAD calibration to circuit level analysis

Asen Asenov, Naoto Horiguchi, Jacopo Franco, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Investigation on the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs: Scaling limit of “Hole in the inversion layer” model

Ru Huang, Asen Asenov, Runsheng Wang, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Impact of slew rate definition on the accuracy of nanoCMOS inverter timing simulations

Asen Asenov, Binjie Cheng, Xingsheng Wang, 2010 .

Impact of Statistical Variability on FinFET Technology: From Device, Statistical Compact Modelling to Statistical Circuit Simulation

Asen Asenov, Binjie Cheng, Xingsheng Wang, 2013 .

Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)

Asen Asenov, Oves Badami, Vihar P. Georgiev, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density Integration

Sorin Cristoloveanu, Asen Asenov, Philippe Galy, 2017, IEEE Transactions on Electron Devices.

Scalable, security-oriented solutions for nanoCMOS electronics

B. Harbulot, Richard O. Sinnott, David W. Chadwick, 2008 .

Benchmarking statistical compact modeling strategies for capturing device intrinsic parameter fluctuations in BSIM4 and PSP

Asen Asenov, Binjie Cheng, Gareth Roy, 2010 .

Intrinsic fluctuations induced by a high‐κ gate dielectric in sub‐100 nm Si MOSFETs

Asen Asenov, Antonio J. Garcia-Loureiro, Karol Kalna, 2005 .

Self-consistent physical modeling of SiOx-based RRAM structures

Asen Asenov, Toufik Sadi, Vihar Georgiev, 2015, 2015 International Workshop on Computational Electronics (IWCE).

Comparative Simulation Analysis of Process-Induced Variability in Nanoscale SOI and Bulk Trigate FinFETs

Asen Asenov, Andrew R. Brown, Bich-Yen Nguyen, 2013, IEEE Transactions on Electron Devices.

A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures

Asen Asenov, Andrew R. Brown, Jeremy R. Watling, 2002 .

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

Asen Asenov, R. Balasubramaniam, S. Saini, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

Asen Asenov, Toufik Sadi, Siegfried Selberherr, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

The impact of random dopant effects on SRAM cells

Asen Asenov, Scott Roy, A. Asenov, 2004 .

Simulation for statistical variability in realistic 20nm MOSFET

Asen Asenov, Andrew R. Brown, Campbell Millar, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs

Asen Asenov, Gerard Ghibaudo, Binjie Cheng, 2008 .

Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

Asen Asenov, Greg Yeric, Binjie Cheng, 2014, IEEE Transactions on Electron Devices.

Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

Asen Asenov, Savas Kaya, J. H. Davies, 2000 .

Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs

Asen Asenov, Ben Kaczer, Zhigang Ji, 2017, IEEE Transactions on Electron Devices.

New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation

Asen Asenov, Guido Groeseneken, Ben Kaczer, 2013, IEEE Transactions on Electron Devices.

Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use- ${V}_{dd}$

Asen Asenov, Ben Kaczer, Zhigang Ji, 2019, IEEE Transactions on Electron Devices.

A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Asen Asenov, John R. Barker, Karol Kalna, 2007 .

Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs

Asen Asenov, Vihar P. Georgiev, Salvatore M. Amoroso, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness

Asen Asenov, Andrew R. Brown, Fikru Adamu-Lema, 2003 .

Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

Asen Asenov, Antonio Martinez, A. Asenov, 2011 .

Statistical 3D 'atomistic' simulation of decanano MOSFETs

Asen Asenov, Andrew R. Brown, Gabriela Slavcheva, 2000 .

Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2009, ESSDERC 2009.

IMPACT OF INTRINSIC PARAMETER FLUCTUATIONS IN NANO-CMOS DEVICES ON CIRCUITS AND SYSTEMS

Asen Asenov, Binjie Cheng, Scott Roy, 2007 .

Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal–Oxide Storage

Asen Asenov, Leroy Cronin, Vihar P. Georgiev, 2014, IEEE Transactions on Electron Devices.

Capacitance fluctuations in bulk MOSFETs due to random discrete dopants

Asen Asenov, Andrew R. Brown, 2008 .

Self-consistent particle simulation of ion channels

Asen Asenov, C. Millar, Scott Roy, 2005 .

Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Asen Asenov, Toufik Sadi, Vihar P. Georgiev, 2019, IEEE Transactions on Electron Devices.

Impact of strain on the performance of high-k/metal replacement gate MOSFETs

Asen Asenov, Scott Roy, Xingsheng Wang, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Efficient Two-Band based Non-Equilibrium Green's Function Scheme for Modeling Tunneling Nano-Devices

Asen Asenov, Vihar P. Georgiev, Mathieu Luisier, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Study of RF Linearity in sub-50 nm MOSFETs Using Simulations

Asen Asenov, Savas Kaya, Wei Ma, 2003 .

Physical simulation of Si-based resistive random-access memory devices

Asen Asenov, Toufik Sadi, Louis Gerrer, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Advanced physical modeling of SiOx resistive random access memories

Asen Asenov, Toufik Sadi, Adnan Mehonic, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Comparison Between Bulk and FDSOI POM Flash Cell: A Multiscale Simulation Study

Asen Asenov, Leroy Cronin, Vihar P. Georgiev, 2015, IEEE Transactions on Electron Devices.

Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks

Asen Asenov, Andrew R. Brown, Jeremy R. Watling, 2006 .

Implications of Imperfect Interfaces and Edges in Ultra‐small MOSFET Characteristics

Asen Asenov, Andrew R. Brown, Savas Kaya, 2002 .

Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Asen Asenov, Binjie Cheng, Stanislav Markov, 2013 .

Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study

Sharief F. Babiker, Asen Asenov, Scott Roy, 1999 .

Impact of body thickness fluctuations in nanometer scale UTB SOI MOSFETs on SRAM cell functionality

Asen Asenov, B. Cheng, Scott Roy, 2005 .

Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

Asen Asenov, Oves Badami, Fikru Adamu-Lema, 2018, Micromachines.

Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

Asen Asenov, Douglas J. Paul, Vihar P. Georgiev, 2017, IEEE Transactions on Nanotechnology.

Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics

Asen Asenov, Andrew R. Brown, Scott Roy, 2004 .

Capacitance variability of short range interconnects

Timothy D. Drysdale, Asen Asenov, Andrew R. Brown, 2008 .

Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study

Asen Asenov, Andrew R. Brown, Fikru Adamu-Lema, 2007 .

Effect of impact ionization in scaled pHEMTs

Asen Asenov, Karol Kalna, Iain G. Thayne, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Compact model strategy for studying the impact of intrinsic parameter fluctuations on circuit performance

Asen Asenov, B. Cheng, Scott Roy, 2004 .

Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

Asen Asenov, Toufik Sadi, Siegfried Selberherr, 2019, IEEE Electron Device Letters.

RANDOM DOPANT INDUCED THRESHOLD VOLTAGE LOWERING AND FLUCTUATIONS IN SUB 50 NM MOSFETS: A STATISTICAL 3D 'ATOMISTIC' SIMULATION STUDY

Asen Asenov, 1999 .

Statistically reliable 'Atomistic' Simulation of Sub 100 nm MOSFETs

Asen Asenov, 1998 .

Band offsets in III-nitride heterostructures

Asen Asenov, Hilmi Ünlü, A. Asenov, 2002 .

A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs

Asen Asenov, Andrew R. Brown, Natalia Seoane, 2010, 2010 Silicon Nanoelectronics Workshop.

Bipolar quantum corrections in resolving individual dopants in ‘atomistic’ device simulation

Asen Asenov, Andrew R. Brown, Gareth Roy, 2003 .

Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems

Asen Asenov, Khairulmizam Samsudin, A. Asenov, 2007 .

Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study

Asen Asenov, John R. Barker, Andrew R. Brown, 2010 .

Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants

Asen Asenov, Andrew R. Brown, Binjie Cheng, 2007 .

Progress in the simulation of time dependent statistical variability in nano CMOS transistors

Asen Asenov, Salvatore M. Amoroso, Louis Gerrer, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devices: A Simulation Study

Asen Asenov, Oves Badami, Vihar P. Georgiev, 2020 .

A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits

Asen Asenov, Toufik Sadi, Andrew R. Brown, 2015, IEEE Circuits and Systems Magazine.

The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study

Asen Asenov, Vihar P. Georgiev, Fikru Adamu-Lema, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications

Asen Asenov, Vihar P. Georgiev, Fikru Adamu-Lema, 2017, IEEE Journal of the Electron Devices Society.

Hierarchical Simulation of Statistical Variability: From 3-D MC With “ ab initio” Ionized Impurity Scattering to Statistical Compact Models

Asen Asenov, Binjie Cheng, Gareth Roy, 2010, IEEE Transactions on Electron Devices.

RTS amplitude distribution in 20nm SOI finFETs subject to statistical variability

Asen Asenov, B. Cheng, A. R. Brown, 2012 .

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Asen Asenov, Ben Kaczer, Vikas Chandra, 2016, IEEE Transactions on Electron Devices.

Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations

Asen Asenov, Andrew R. Brown, Gareth Roy, 2003 .

Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator

Asen Asenov, Toufik Sadi, Adnan Mehonic, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

The "gated-diode" configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation

Asen Asenov, Werner Weber, W. Weber, 1995 .

Bipolar quantum corrections in resolving individual dopants in atomistic, intrinsic parameter fluctuations into compact model circuit analysis

Asen Asenov, Gareth Roy, Scott Roy, 2003 .

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Asen Asenov, Vihar P. Georgiev, Fikru Adamu-Lema, 2018, IEEE Electron Device Letters.

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

Asen Asenov, Karol Kalna, Iain G. Thayne, 2009 .

Process Variability for Devices at and beyond the 7 nm Node

Asen Asenov, C. Millar, S. Barraud, 2018 .

Towards polyoxometalate-cluster-based nano-electronics.

Asen Asenov, Leroy Cronin, Vihar Georgiev, 2013, Chemistry.

Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

Asen Asenov, D. G. Haigh, Iain G. Thayne, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

Asen Asenov, John R. Barker, Jeremy R. Watling, 1998, 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

Asen Asenov, Andrew R. Brown, Scott Roy, 2003 .

Gate tunnelling and impact ionisation in sub 100 nm PHEMTs

Asen Asenov, Karol Kalna, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

Asen Asenov, Vihar Georgiev, Hamilton Carrillo-Nuñez, 2019, IEEE Electron Device Letters.

3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET

Asen Asenov, Fikru Adamu-Lema, Louis Gerrer, 2013, IEEE Transactions on Electron Devices.

Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study

Asen Asenov, Andrew R. Brown, Gareth Roy, 2006 .

Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs

Asen Asenov, Fikru Adamu-Lema, Louis Gerrer, 2014, IEEE Transactions on Electron Devices.

3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs

Asen Asenov, Louis Gerrer, Salvatore Maria Amoroso, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Problems With the Continuous Doping TCAD Simulations of Decananometer CMOS Transistors

Asen Asenov, Fikru Adamu-Lema, Salvatore Maria Amoroso, 2014, IEEE Transactions on Electron Devices.

Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors

Asen Asenov, Douglas J. Paul, Vihar P. Georgiev, 2018, IEEE Transactions on Electron Devices.

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Asen Asenov, Toufik Sadi, Vihar Georgiev, 2019, IEEE Transactions on Electron Devices.

From atoms to product reliability: toward a generalized multiscale simulation approach

Asen Asenov, Louis Gerrer, P. Asenov, 2013 .

Excessive Over-Relaxation Method for Multigrid Poisson Solvers

Asen Asenov, Campbell Millar, Jeremy R. Watling, 2002 .

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Asen Asenov, Leroy Cronin, Haralampos N. Miras, 2014, Nature.

3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER

Asen Asenov, A. Asenov, 2001 .

Scaling study of Si/SiGe MODFETs for RF applications

Asen Asenov, John R. Barker, Jeremy R. Watling, 2002, The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications.