S.E. Rauch

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

M.D. Berg, C.M. Seidleck, J.A. Pellish, 2009, IEEE Transactions on Nuclear Science.

A practical approach for the accurate lifetime estimation of device degradation in deep sub-micron CMOS technologies

G. La Rosa, S.E. Rauch, F.J. Guarin, 2002, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611).

High-$V_{\rm GS}$ PFET DC Hot-Carrier Mechanism and Its Relation to AC Degradation

S.E. Rauch, F. Guarin, G. La Rosa, 2010, IEEE Transactions on Device and Materials Reliability.

The energy-driven paradigm of NMOSFET hot-carrier effects

S.E. Rauch, S. Rauch, G. La Rosa, 2005, IEEE Transactions on Device and Materials Reliability.

Role of e-e scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high V/sub GS/ conditions

S.E. Rauch, G. La Rosa, F.J. Guarin, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

The energy driven paradigm of NMOSFET hot carrier effects

S.E. Rauch, S. Rauch, G. La Rosa, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..