Joseph A. Smart

发表

High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates

Lester F. Eastman, Hyungtak Kim, Kevin J. Webb, 2001, IMS 2001.

Very low dislocation density AlN substrates for device applications

Leo J. Schowalter, S. B. Schujman, Joseph A. Smart, 2006, SPIE OPTO.

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Lester F. Eastman, Oliver Ambacher, James R. Shealy, 1999 .

Undoped AlGaN/GaN HEMTs for microwave power amplification

Lester F. Eastman, Oliver Ambacher, William J. Schaff, 2001 .

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Oliver Ambacher, Martin Stutzmann, Nils Weimann, 1999 .

Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication

Leo J. Schowalter, Kenneth E. Morgan, S. B. Schujman, 2008 .

Large-area AlN substrates for electronic applications: An industrial perspective

Leo J. Schowalter, Kenneth E. Morgan, S. B. Schujman, 2008 .

Effect of passivation on AlGaN/GaN HEMT device performance

Lester F. Eastman, William J. Schaff, James R. Shealy, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

Leo J. Schowalter, James R. Grandusky, Mark C. Mendrick, 2009 .

Low‐Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ‐Ray Quanta

Lester F. Eastman, A. E. Belyaev, Svetlana Vitusevich, 2003 .

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 1999 .

UV Light Emitting Diodes - Their Applications and Benefits

Leo J. Schowalter, S. B. Schujman, Joseph A. Smart, 2007 .

Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias

Lester F. Eastman, V. Kaper, James R. Shealy, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 2000 .

Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

James R. Shealy, Joseph A. Smart, J. Shealy, 2001 .

Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions

Lester F. Eastman, V. Kaper, James R. Shealy, 2003 .

Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

Lester F. Eastman, William J. Schaff, James R. Shealy, 2001 .

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

Lester F. Eastman, V. Kaper, James R. Shealy, 2002 .

Excess low-frequency noise in AlGaN'GaN-based high-electron-mobility transistors

Lester F. Eastman, A. E. Belyaev, Svetlana Vitusevich, 2002 .

Degradation characteristics of AlGaN-GaN high electron mobility transistors

Lester F. Eastman, Ho-Young Cha, James R. Shealy, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

AlGaN/GaN high electron mobility transistors on Si(111) substrates

Yu Wang, Noel C. MacDonald, J. J. Komiak, 2001 .

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

Josef Zweck, Oliver Ambacher, Wolfgang Gebhardt, 2000 .