Veeraraghavan S. Basker

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor

Xin Miao, James H. Stathis, Tenko Yamashita, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

TDDB Reliability in Gate-All-Around Nanosheet

Miaomiao Wang, Richard G. Southwick, Ruqiang Bao, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

Pierre Morin, Frederic Allibert, Nicolas Loubet, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor

Nicolas Loubet, Tenko Yamashita, Sivananda Kanakasabapathy, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).