Chris G. Van de Walle

发表

First-Principles Calculations of Point Defects for Quantum Technologies

Audrius Alkauskas, Anderson Janotti, Cyrus E. Dreyer, 2018, Annual Review of Materials Research.

Wide-band-gap semiconductors : proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992

Chris G. Van de Walle, 1993 .

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction

Steven P. DenBaars, Umesh K. Mishra, Jing Lu, 2019, 2019 Device Research Conference (DRC).

Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

Anderson Janotti, Chris G. Van de Walle, David Segev, 2006 .

Defect analysis and engineering in ZnO

Chris G. Van de Walle, C. Walle, 2001 .

Advances in electronic structure methods for defects and impurities in solids

Anderson Janotti, Chris G. Van de Walle, A. Janotti, 2011 .

Hydrogen as a shallow center in semiconductors and oxides

Chris G. Van de Walle, C. Walle, C. G. Van de Walle, 2003 .

Correct implementation of polarization constants in wurtzite materials and impact on III-nitrides

David Vanderbilt, Anderson Janotti, Cyrus E. Dreyer, 2016, 1605.07629.

CLEAN AND AS-COVERED ZINC-BLENDE GAN(001) SURFACES : NOVEL SURFACE STRUCTURES AND SURFACTANT BEHAVIOR

Matthias Scheffler, Chris G. Van de Walle, John E. Northrup, 1998 .

Chapter 4 Hydrogen in III-V Nitrides

Chris G. Van de Walle, C. Walle, N. Johnson, 1999 .

Hydrogen as a cause of doping in ZnO

Chris G. Van de Walle, 2001 .

Microscopic origins of surface states on nitride surfaces

Chris G. Van de Walle, David Segev, C. Walle, 2007 .

Defects and doping in GaN

Chris G. Van de Walle, 1997 .

Acceptor doping in ZnSe versus ZnTe

Sokrates T. Pantelides, Chris G. Van de Walle, Gertrude F. Neumark, 1993 .

Why nitrogen cannot lead to $p$-type conductivity in ZnO

Anderson Janotti, John L. Lyons, Chris G. Van de Walle, 2009 .

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

Qimin Yan, Matthias Scheffler, Anderson Janotti, 2012 .

Doping of AlxGa1−xN

Chris G. Van de Walle, Catherine Stampfl, C. Stampfl, 1998 .

Role of hydrogen in doping of GaN

Jörg Neugebauer, Chris G. Van de Walle, C. Walle, 1996 .

Doping of AlGaN alloys

Matthew D. McCluskey, Jörg Neugebauer, N. M. Johnson, 1999 .

Theoretical Study of Semiconductor Interfaces

Richard M. Martin, Chris G. Van de Walle, 1985 .

Surface reconstructions on InN and GaN polar and nonpolar surfaces

Chris G. Van de Walle, David Segev, C. Walle, 2007 .

Gallium vacancies and the yellow luminescence in GaN

Jörg Neugebauer, Chris G. Van de Walle, C. Walle, 1996 .

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Georg Kresse, Saulius Marcinkevicius, Martijn Marsman, 2016 .

Strategies for Controlling the Conductivity of Wide-Band-Gap Semiconductors

Chris G. Van de Walle, C. Walle, 2002 .

First-principles studies of beryllium doping of GaN

Jörg Neugebauer, Chris G. Van de Walle, C. Walle, 2001 .

INTERACTIONS OF HYDROGEN WITH NATIVE DEFECTS IN GAN

Chris G. Van de Walle, C. Walle, 1997 .

Khang Hoang, Chris G. Van de Walle, C. Walle, 2009 .

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Siddharth Rajan, Susanne Stemmer, Pouya Moetakef, 2011 .

Ferroelastic switching of doped zirconia: Modeling and understanding from first principles

Carlos G. Levi, Matthias Scheffler, Christian Carbogno, 2014 .

Doping of AlxGa1−xN alloys

Jörg Neugebauer, Chris G. Van de Walle, Catherine Stampfl, 1999 .

Heterojunction band offset engineering

Alfonso Franciosi, Chris G. Van de Walle, C. Walle, 1996 .

Comment on ‘‘Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing’’ [Appl. Phys. Lett. 68, 2526 (1996)]

W. B. Jackson, Chris G. Van de Walle, C. Walle, 1996 .

Fundamentals of zinc oxide as a semiconductor

Anderson Janotti, Chris G. Van de Walle, A. Janotti, 2009 .

Effects of doping on the lattice parameter of SrTiO3

Susanne Stemmer, Bharat Jalan, Anderson Janotti, 2012 .

Diffusivity of native defects in GaN

Chris G. Van de Walle, C. Walle, S. Limpijumnong, 2004 .

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

James S. Speck, Cyrus E. Dreyer, John L. Lyons, 2016 .

Electrostatic interactions between charged defects in supercells

Jörg Neugebauer, Christoph Freysoldt, Chris G. Van de Walle, 2011 .

Optimizing optical absorption of TiO2 by alloying with TiS2

Patrick Rinke, Anderson Janotti, Naoto Umezawa, 2008 .

Native defects, impurities, and doping in GaN and related compounds: general remarks

Jörg Neugebauer, Chris G. Van de Walle, Catherine Stampfl, 1999 .

ENERGETICS AND ELECTRONIC STRUCTURE OF STACKING FAULTS IN ALN, GAN, AND INN

Chris G. Van de Walle, Catherine Stampfl, C. Stampfl, 1998 .