Ramon Collazo

发表

Point defect management in GaN by Fermi-level control during growth

James Tweedie, Zlatko Sitar, Ronny Kirste, 2014, Photonics West - Optoelectronic Materials and Devices.

Fermi level effect on strain of Si-doped GaN

James Tweedie, Zlatko Sitar, Seiji Mita, 2011, OPTO.

Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation)

Yohannes Abate, Nikolaus Dietz, Axel Hoffmann, 2016, Optical Engineering + Applications.

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Zlatko Sitar, Seiji Mita, Ronny Kirste, 2013, Photonics West - Optoelectronic Materials and Devices.

Second-Harmonic Generation of Blue Light in GaN Waveguides

Wei Guo, Marko Zgonik, Zlatko Sitar, 2018, Applied Sciences.

(Invited) Material Considerations for the Development of III-Nitride Power Devices

James Tweedie, Zlatko Sitar, Erhard Kohn, 2017 .

Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields

Zlatko Sitar, Seiji Mita, Spyridon Pavlidis, 2021, 2021 Device Research Conference (DRC).

UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators

Spyridon Pavlidis, Pramod Reddy, Ramon Collazo, 2021, 2021 IEEE Radio and Wireless Symposium (RWS).

Optical signature of Mg-doped GaN: Transfer processes

James Tweedie, Zlatko Sitar, Ronny Kirste, 2012 .

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

Rafael Dalmau, Zlatko Sitar, Seiji Mita, 2008 .

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Alexander Franke, Zlatko Sitar, Seiji Mita, 2016 .

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

James Tweedie, Zlatko Sitar, Seiji Mita, 2010 .

Electronic Biosensors Based on III-Nitride Semiconductors.

Ronny Kirste, Albena Ivanisevic, Zachary Bryan, 2015, Annual review of analytical chemistry.

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Zlatko Sitar, Seiji Mita, Jinqiao Xie, 2015 .

On the origin of the 265 nm absorption band in AlN bulk crystals

Toru Kinoshita, Rafael Dalmau, Baxter Moody, 2012 .

Aqueous stability of Ga- and N-polar gallium nitride.

Zlatko Sitar, Albena Ivanisevic, Ramon Collazo, 2013, Langmuir : the ACS journal of surfaces and colloids.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Andreas Hoffmann, Alexander Franke, Marko Zgonik, 2016 .

Seeded growth of AlN bulk crystals in m- and c-orientation

Balaji Raghothamachar, Michael Dudley, Rafael Dalmau, 2009 .

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

James Tweedie, Zlatko Sitar, Seiji Mita, 2016 .

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

James Tweedie, Rafael Dalmau, Martin Feneberg, 2010, ECS Transactions.

Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport

Zlatko Sitar, Raoul Schlesser, Ramon Collazo, 2006 .

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

James Tweedie, Zlatko Sitar, Seiji Mita, 2015 .

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

James Tweedie, Zlatko Sitar, Ronny Kirste, 2013 .

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Wei Guo, Zlatko Sitar, Seiji Mita, 2014 .

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

James Tweedie, Zlatko Sitar, Ronny Kirste, 2011 .

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

Zlatko Sitar, Kentaro Furusawa, Seiji Mita, 2013 .

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

James Tweedie, Wei Guo, Zlatko Sitar, 2015 .

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Wei Guo, Baxter Moody, Zlatko Sitar, 2013 .

Polarity Control of LP-MOVPE GaN using N 2 the Carrier Gas

Zlatko Sitar, Seiji Mita, Raoul Schlesser, 2005 .

The role of surface kinetics on composition and quality of AlGaN

James Tweedie, Zlatko Sitar, Jon-Paul Maria, 2016 .

6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

Alexander Franke, Zlatko Sitar, Seiji Mita, 2018, Applied Physics Express.

Refractive Index of III-metal-polar and N-polar AlGaN Waveguides Grown by Metal Organic Chemical Vapor Deposition

Marko Zgonik, Zlatko Sitar, Seiji Mita, 2013 .

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

James Tweedie, Rafael Dalmau, Zlatko Sitar, 2010 .

Status and challenges in deep UV semiconductor lasers

Zlatko Sitar, Ronny Kirste, Zachary Bryan, 2015, 2015 IEEE Summer Topicals Meeting Series (SUM).

MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy

Mark D. Losego, Zlatko Sitar, Jon-Paul Maria, 2006 .