N. Mestres

Gate oxides on 4H-SiC substrates grown or annealed in N/sub 2/O/Ar mixture

P. Godignon, J. Millan, D. Tournier, 2004, 2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748).

Self-heating experimental study of 600V PT-IGBTs under low dissipation energies

Philippe Godignon, Xavier Jordà, X. Perpiñà, 2004, Microelectron. J..

Fabrication of electrostatic resonators with monocrystalline 3C-SiC grown on silicon

P. Godignon, J. Esteve, M. Placidi, 2005, CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005..

Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

J. Millan, D. Tournier, A. Perez-Tomas, 2005, IEEE Transactions on Electron Devices.

Comparative evaluation of implantation damage produced by N and P ions in 6H-SiC

Phillippe Godignon, N. Mestres, Jean Camassel, 2003 .

Study of AlN/SiO/sub 2/ as dielectric layer for SiC MOS structures

X. Jorda, S. Hidalgo, O. Biserica, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).