A. Nakagawa

Silicon limit electrical characteristics of power devices and Ics

Yusuke Kawaguchi, A. Nakagawa, K. Nakamura, 2008 .

Numerical experiment for 2500 V double gate bipolar-mode MOSFETs (DGIGBT) and analysis for large safe operating area (SOA)

A. Nakagawa, 1988, PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference.

Optimization of 5V power devices based on CMOS for hot-carrier degradation

K. Nakamura, A. Nakagawa, T. Matsudai, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..