David J. Wallis

发表

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Ian W. Boyd, Colin J. Humphreys, Wai Yuen Fu, 2016 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Silicon as an Active Biomaterial

Michael C. L. Ward, Leigh T. Canham, T. I. Cox, 1996 .

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

Martin Kuball, Michael J. Uren, David J. Wallis, 2012 .

Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions

David J. Wallis, Jonathan J. Powell, L. Canham, 2003 .

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Wai Yuen Fu, Siyuan Zhang, Bertrand Rouet-Leduc, 2015, Nano letters.

Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Peter J Heard, Martin Kuball, Michael J. Uren, 2005 .

Subthreshold Mobility in AlGaN/GaN HEMTs

Martin Kuball, Jan Sonsky, Peter A. Houston, 2016, IEEE Transactions on Electron Devices.

Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

Peter A. Houston, Michael J. Uren, David J. Wallis, 2010 .

Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content

Michael J. Uren, Paul D. Brown, K. P. Hilton, 2004 .

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Suman Datta, Martin Trevor Emeny, T. J. Phillips, 2007 .

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Andrew J. Forsyth, Pablo F. Miaja, Sheng Jiang, 2017, IEEE Transactions on Power Electronics.

Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing.

Erdan Gu, Martin D. Dawson, Benoit Guilhabert, 2015, Optics express.

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Martin Kuball, Peter A. Houston, Michael J. Uren, 2015, IEEE Transactions on Electron Devices.

CS MANTECH Conference

Trevor P Martin, Martin Kuball, Michael J. Uren, 2007 .