Tommaso Orzali

(Invited) Technology options to reduce contact resistance in Nanoscale III-V MOSFETs

Chris Hobbs, Alexey Vert, Wei-Yip Loh, 2015 .

Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping

Serge Oktyabrsky, Joshua Herman, Alexey Vert, 2016 .

Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Naoto Horiguchi, Geert Hellings, Niamh Waldron, 2012 .

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Aras Norvilas, Joshua Herman, Alexey Vert, 2015 .