Maosheng Hao

发表

Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD

Shiro Sakai, Jie Wang, Marek Osinski, 1998, Other Conferences.

Correlation between dislocations and luminescence in GaN

Tamoya Sugahara, Satoshi Kurai, Shiro Sakai, 1998, Other Conferences.

MOCVD法による4インチSi基板上GaN及びAlGaN/GaNヘテロ構造の結晶成長(窒化物及び混晶半導体デバイス)

石川博康, 江川孝志, 神保孝志, 2003 .

Luminescence, morphology, and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition

Tamoya Sugahara, Shiro Sakai, Zhe Chuan Feng, 1999, International Symposium on Photonics and Applications.

Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates

Soo Jin Chua, I. M. Tiginyanu, Victoria M. Ichizli, 2001, International Symposium on Photonics and Applications.

Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

Hiroyasu Ishikawa, Takashi Egawa, Maosheng Hao, 2004 .

Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Satoshi Kurai, Hisao Sato, Kenji Yamashita, 1998 .

Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition

Hiroyasu Ishikawa, Takashi Egawa, Baijun Zhang, 2004 .

V-shaped defects in InGaN/GaN multiquantum wells

Yoshiki Naoi, Shiro Sakai, Tomoya Sugahara, 1999 .

Role of Dislocation in InGaN Phase Separation

Yoshiki Naoi, Shiro Sakai, Tomoya Sugahara, 1998 .

Porous GaAs formed by a two-step anodization process

Takashi Jimbo, Tetsuo Soga, Masayoshi Umeno, 1997 .