Eiichi Hoshino

发表

Thermal response of EUVL mask substrate during dry etching process

Akira Chiba, Masashi Takahashi, Masaaki Ito, 2001, Photomask Japan.

New method of critical dimension (CD) control for 64-Mbit-DRAM reticles

Eiichi Hoshino, Masahiro Uraguchi, Hideaki Hasegawa, 1994, Photomask and Next Generation Lithography Mask Technology.

Dry etching with consideration to thicker reticle size

Nobuyuki Yoshioka, Eiichi Hoshino, Atsushi Hayashi, 1997, Photomask and Next Generation Lithography Mask Technology.

Simulation model of in-plane distortion in EUVL mask during chucking

Kazuya Ota, Akira Chiba, Minoru Sugawara, 2002, SPIE Advanced Lithography.

Pattern printability for off-axis incident light in EUV lithography

Akira Chiba, Minoru Sugawara, Masaaki Ito, 2002, SPIE Advanced Lithography.

Fabrication of Mo/Si multilayer for EUVL reticle blank using ion beam sputtering

Masashi Takahashi, Shinji Okazaki, Eiichi Hoshino, 2002, SPIE Advanced Lithography.

Deflection error due to charge-up effect of reticle substrate

Junji Hirumi, Eiichi Hoshino, Kouji Hosono, 1998, Photomask and Next Generation Lithography Mask Technology.

Smooth low-stress sputtered tantalum and tantalum alloy films for the absorber material of reflective-type EUVL

Akira Chiba, Masashi Takahashi, Shinji Okazaki, 2000, Advanced Lithography.

Bilevel resist process for 1-Gb DRAM reticles

Keiji Watanabe, Eiichi Hoshino, Kotaro Shirabe, 1996, Photomask and Next Generation Lithography Mask Technology.

Application of charge-dispersing layer to reticle fabrication

Keiji Watanabe, Eiichi Hoshino, Kotaro Shirabe, 1997, Photomask and Next Generation Lithography Mask Technology.

Evidence for False Memory before Deletion in Visual Short-Term Memory

Eiichi Hoshino, Ken Mogi, K. Mogi, 2010, ICONIP.

Fine pattern process with negative tone resist: II

Keiji Watanabe, Eiichi Hoshino, Akira Morishige, 1999, Photomask and Next Generation Lithography Mask Technology.

Characteristics of the Ru buffer layer for EUVL mask patterning

Akira Chiba, Masashi Takahashi, Masaaki Ito, 2001, SPIE Advanced Lithography.

Process scheme for removing buffer layer on multilayer for EUVL mask

Akira Chiba, Masashi Takahashi, Masaaki Ito, 2000, Photomask Japan.

Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography

Iwao Nishiyama, Akira Chiba, Masashi Takahashi, 2002, Photomask Japan.

Multiple processes in two-dimensional visual statistical learning

Eiichi Hoshino, Ken Mogi, K. Mogi, 2017, PloS one.

Removal process for buffer layer on multilayer of EUVL mask

Akira Chiba, Masashi Takahashi, Masaaki Ito, 2001, European Mask and Lithography Conference.

Preparation-Free Measurement of Event-Related Potential in Oddball Tasks From Hairy Parts Using Candle-Like Dry Microneedle Electrodes

Norihisa Miki, Eiichi Hoshino, Yasuyo Minagawa, 2018, 2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC).

Fine-pattern process with negative tone resist

Keiji Watanabe, Eiichi Hoshino, Masahiro Uraguchi, 1998, Photomask and Next Generation Lithography Mask Technology.

Simulation studies of roughness-smoothing effect of molybdenum/silicon multilayer coating based on resputtering model

Masaaki Ito, Shinji Okazaki, Eiichi Hoshino, 2002, SPIE Advanced Lithography.

Surface preparation of EUVL mask substrate for multilayer coating by supersonic hydrocleaning technique

Akira Chiba, Masashi Takahashi, Shinji Okazaki, 2000, Photomask Japan.

Tantalum nitride films for the absorber material of refractive-type EUVL mask

Akira Chiba, Masashi Takahashi, Shinji Okazaki, 2001, SPIE Advanced Lithography.

Memory Formation of Object Representation: Natural Scenes

Eiichi Hoshino, Ken Mogi, Fumihiko Taya, 2008 .

Dry etching of Ta absorber for EUVL masks

Akira Chiba, Masashi Takahashi, Masaaki Ito, 2001, SPIE Photomask Technology.

Damage control during dry etching of EUV mask: I. Control of surface roughness

Masashi Takahashi, Shinji Okazaki, Eiichi Hoshino, 1999, Photomask Technology.