I. Takemoto

MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager

N. Koike, I. Takemoto, K. Satoh, 1980, IEEE Transactions on Electron Devices.

2/3-inch format MOS single-chip color imager

I. Takemoto, S. Nagahara, M. Kubo, 1982, IEEE Transactions on Electron Devices.

MOS Area Sensor: Part I - Design Consideration and Performance of an n-p-n Structure 484 x 384 Element Color MOS Imager

I. Takemoto, K. Satoh, S. Hanamura, 1980, IEEE Journal of Solid-State Circuits.

2/3-Inch Format MOS Single-Chip Color Imager

I. Takemoto, S. Nagahara, M. Kubo, 1982, IEEE Journal of Solid-State Circuits.

Design consideration and performance of a new MOS imaging device

T. Suzuki, I. Takemoto, T. Masuhara, 1985, IEEE Transactions on Electron Devices.

Heat- and light-resistance characteristics of an MOS imaging device with monolithically integrated color filters

N. Koike, I. Takemoto, T. Nakano, 1985, IEEE Transactions on Electron Devices.