K. Shibusawa

Enhancement of hot-carrier induced degradation under low gate voltage stress due to hydrogen for NMOSFETs with SiN films

T. Nakamura, Hidetsugu Uchida, N. Murakami, 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

Low Temperature Atomically Flattening of Si Surface of Shallow Trench Isolation Pattern

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2015 .

Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG

Tadahiro Ohmi, Naoto Miyamoto, Shigetoshi Sugawa, 2007 .

Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2010 .