C. Gunderson

Design considerations for sub-0.35 mu m buried channel P-MOSFET devices

A. Mazure, R. Subrahmanyan, C. Gunderson, 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

Facet engineered elevated source/drain by selective Si epitaxy for 0.35 micron MOSFETS

C. Gunderson, C. Mazure, J. Fitch, 1992, 1992 International Technical Digest on Electron Devices Meeting.

An integrated 0.5 mu m CMOS disposable TiN LDD/salicide spacer technology

C. Gunderson, M. Woo, H. Kawasaki, 1989, International Technical Digest on Electron Devices Meeting.