Hiroki I. Fujishiro

Determination of small-signal parameters and noise figures of MESFET's by physics-based circuit simulator employing Monte Carlo technique

Takao Ishii, Masahiro Nakayama, Teruyuki Takei, 2003 .

Effect of Types of Ga/Si(111) Reconstructed Structure on Growth Morphology of GaSb Island

Hara Shinsuke, Hiroki I. Fujishiro, Ryuto Machida, 2013 .

Quantum-corrected Monte Carlo analysis of scaling behavior of nano-scale InGaAs high electron mobility transistors

Jesus A. del Alamo, Hiroki I. Fujishiro, J. Alamo, 2008 .

InSb-based HEMT with over 300 GHz-fT using evaporated SiOx film

Akifumi Kasamatsu, Issei Watanabe, Sachie Fujikawa, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction

Sachie Fujikawa, Hiroki I. Fujishiro, Tatsuya Taketsuru, 2015 .