S.J. Rhee

Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO/sub 2/ gate dielectrics

S.J. Lee, S.J. Rhee, R. Clark, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

The effects of nitrogen and silicon profile on high-k MOSFET performance and Bias Temperature Instability

Changhwan Choi, J.C. Lee, S.J. Rhee, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Improving carrier mobility and reliability characteristics of high-k NMOSFET by using stacked Y2O3/HfO2 gate dielectric

Feng Zhu, J.C. Lee, S.J. Rhee, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Effects of optimized nitrogen tailoring in high-k dielectrics on impurity penetration and stress induced device degradation [MOSFETs]

J.C. Lee, S.J. Rhee, H.S. Kim, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

A design-specific approach to design-for-assembly (DFA) for complex mechanical assemblies

S.J. Rhee, T.L. De Fazio, D.E. Whitney, 1997, Proceedings of the 1997 IEEE International Symposium on Assembly and Task Planning (ISATP'97) - Towards Flexible and Agile Assembly and Manufacturing -.

Effects of thin SiN interface layer on transient I-V characteristics and stress induced degradation of high-k dielectrics

J.C. Lee, S.J. Rhee, Y.H. Kim, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Comparison study of electromagnet and permanent magnet systems for an accelerator using cost-based failure modes and effects analysis

S.J. Rhee, C.M. Spencer, C. Spencer, 2004, IEEE Transactions on Applied Superconductivity.