Laurent Nevou

发表

Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

Lise Lahourcade, H. Machhadani, P. K. Kandaswamy, 2009, Microelectron. J..

Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Paul Crozat, Gottfried Strasser, Anatole Lupu, 2007 .

Strain-induced interface instability in GaN/AlN multiple quantum wells

Francois H. Julien, Eric Feltin, Nicolas Grandjean, 2007 .

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Paul Crozat, Raffaele Colombelli, Laurent Vivien, 2008 .

Room-temperature intersubband emission of GaN/AlN quantum wells at /spl lambda/=2.3 /spl mu/m

Raffaele Colombelli, Eva Monroy, Fabien Guillot, 2006 .

Electron confinement in strongly coupled GaN /AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

MBE growth of nitride-based photovoltaic intersubband detectors

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2006 .

Nitride intersubband devices: prospects and recent developments

Raffaele Colombelli, Francois H. Julien, Maria Tchernycheva, 2007 .

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Myriam Raybaut, Francois H. Julien, Antoine Godard, 2006 .

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Marc Ilegems, Francois H. Julien, Eric Feltin, 2005 .

Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions

Marc Ilegems, Francois H. Julien, Eric Feltin, 2007 .

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Marcin Siekacz, 2006 .

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

Juliette Mangeney, Francois H. Julien, Maria Tchernycheva, 2009 .

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Maria Tchernycheva, Eva Monroy, Fabien Guillot, 2007 .

Near‐infrared intersubband emission from GaN/AlN quantum dots and quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2008 .

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Latest developments in GaN-based quantum devices for infrared optoelectronics

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2008 .

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy : Applications to intersubband transitions

Marc Ilegems, Francois H. Julien, Eric Feltin, 2006 .

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Esther Baumann, Daniel Hofstetter, Maria Tchernycheva, 2008 .

GaN-based quantum dot infrared photodetector operating at 1.38 /spl mu/m

Raffaele Colombelli, Anatole Lupu, Maria Tchernycheva, 2005 .

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

Raffaele Colombelli, Francois H. Julien, Maria Tchernycheva, 2005 .

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

Maria Tchernycheva, Eva Monroy, Fabien Guillot, 2008 .

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

Marcin Siekacz, Izabella Grzegory, Pawel Prystawko, 2006 .

Ultrastrong coupling regime and plasmon polaritons in parabolic semiconductor quantum wells.

Mattias Beck, Jérôme Faist, Markus Geiser, 2011, Physical review letters.