H. R. Huff

Growing pain : Material and metrology challenges for the transition to 300 mm wafers

H. R. Huff, R. K. Goodall, 1996 .

MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS

Byoung Hun Lee, Gennadi Bersuker, Alexander L. Shluger, 2006 .

Experimental Observations on Conduction Through Polysilicon Oxide

H. R. Huff, R. D. Halvorson, Te-Long Chiu, 1980 .

Properties of the interfacial layer in the high-k gate stack and transistor performance

Byoung Hun Lee, Anatoli Korkin, G. Bersuker, 2005 .

Silicon Material Properties for VLSI Circuitry

H. R. Huff, H. Huff, J. E. Lawrence, 1982 .

Minority‐Carrier Lifetime: Correlation with IC Process Parameters

H. R. Huff, T. L. Chiu, 1979 .

Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics

G. Lucovsky, Curt A. Richter, H. R. Huff, 1999 .