Tetsuji Yasuda

发表

Optical polarization measurements of exciton-Zeeman splitting and carrier-spin relaxation in ZnxCd1-xSe/ZnSe multiquantum wells

Takanari Yasui, B. P. Zhang, Tetsuji Yasuda, 1996, Other Conferences.

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013 .

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2013, IEEE Transactions on Nanotechnology.

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Meishoku Masahara, Tetsuji Yasuda, A. Tanabe, 2014 .

EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage

M. Masahara, Tetsuji Yasuda, A. Tanabe, 2012 .

On the nonlocal modeling of tunnel-FETs Device and Compact models

Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, 2013 .

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2010 .

Formation of III–V-on-insulator structures on Si by direct wafer bonding

Mitsuru Takenaka, Yuki Ikku, Shinichi Takagi, 2013 .

III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi, 2012 .

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013, IEEE Transactions on Electron Devices.

Grouping of independent single molecules on silicon surfaces

Jing Yong Ye, Tetsuji Yasuda, Mitsuru Ishikawa, 1998 .

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi, 2009 .

Atomic-layer resolved monitoring of thermal oxidation of Si(001) by reflectance difference oscillation technique

Naoto Kumagai, Tetsuji Yasuda, Kikuo Yamabe, 2004 .

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2012 .

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal?Oxide?Semiconductor Field-Effect Transistors Using Ni?InGaAs Alloy

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2011 .

Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Kunihiro Sakamoto, Meishoku Masahara, Tetsuji Yasuda, 2011 .

Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi, 2011 .

Characterization of Amorphous Carbon Films Prepared by Photo-Enhanced Chemical Vapor Deposition at Low Temperatures

Tetsuji Yasuda, Hiroshi Komiyama, 1990 .

Ge/III-V Channel Engineering for Future CMOS

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2009 .

(Invited) Thin Epitaxial Film of Ge and III-V Directly Bonded onto Si Substrate

Taro Itatani, J. Yugami, Toshiyuki Kikuchi, 2014 .