Randy W. Mann

发表

Optimization criteria for SRAM design: lithography contribution

Daniel C. Cole, Orest Bula, Edward W. Conrad, 1999, Advanced Lithography.

Bias-Induced Healing of $V_{\text {min}}$ Failures in Advanced SRAM Arrays

Randy W. Mann, William McMahon, Yoann Mamy Randriamihaja, 2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Limits of bias based assist methods in nano-scale 6T SRAM

Jiajing Wang, Benton H. Calhoun, Randy W. Mann, 2010, 2010 11th International Symposium on Quality Electronic Design (ISQED).

Enchanced multi-threshold (MTCMOS) circuits using variable well bias

Michael Immediato, Terence B. Hook, Stephen V. Kosonocky, 2001, ISLPED '01.

Nonrandom Device Mismatch Considerations in Nanoscale SRAM

Benton H. Calhoun, Randy W. Mann, Terry B. Hook, 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Ultralow-power technology

Terence B. Hook, Matthew J. Breitwisch, Orest Bula, 2003 .

An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM

Carl J. Radens, Randy W. Mann, Sanjay Parihar, 2019, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

New category of ultra-thin notchless 6T SRAM cell layout topologies for sub-22nm

Benton H. Calhoun, Randy W. Mann, 2011, 2011 12th International Symposium on Quality Electronic Design.

Tracking On-Chip Age Using Distributed, Embedded Sensors

Zhenyu Qi, Jiajing Wang, Adam C. Cabe, 2012, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Array Termination Impacts in Advanced SRAM

Randy W. Mann, Daniel Marienfeld, Xiaoqiang Zhang, 2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Silicides and local interconnections for high-performance VLSI applications

Paul D. Agnello, Randy W. Mann, Larry A. Clevenger, 1995, IBM J. Res. Dev..

Soft errors: Reliability challenges in energy-constrained ULP body sensor networks applications

Benton H. Calhoun, Harsh N. Patel, Randy W. Mann, 2017, 2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS).

A half-micron CMOS logic generation

Yuan Taur, Edward J. Nowak, Randy W. Mann, 1995, IBM J. Res. Dev..

Bias-Dependent Variation in FinFET SRAM

Randy W. Mann, Sanjay Parihar, Jack Higman, 2020, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

A method and structure for connecting different zones of polysilicon for integrated circuits

Randy W. Mann, Paul C. Parries, John Robert Abernathey, 1991 .

A half-micron manufacturable high performance CMOS technology applicable for multiple power supply applications

A. Bhattacharyya, Randy W. Mann, Edward J. Nowak, 1989, International Symposium on VLSI Technology, Systems and Applications,.

Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing

A. Kumar, Y. Song, Vivek Joshi, 2015, 2015 IEEE International Reliability Physics Symposium.

Improving SRAM Vmin and yield by using variation-aware BTI stress

Zhenyu Qi, Jiajing Wang, Benton H. Calhoun, 2010, IEEE Custom Integrated Circuits Conference 2010.

A Retrospective View on the Technology Evolution to Support Low Power Mobile Application

Edward J. Nowak, Lars Liebmann, Bipul Chandra Paul, 2018, J. Low Power Electron..

Impact of circuit assist methods on margin and performance in 6T SRAM

Jiajing Wang, Benton H. Calhoun, Harold Pilo, 2010 .

Ultralow-power SRAM technology

Terence B. Hook, Atsushi Moriwaki, Matthew J. Breitwisch, 2003, IBM J. Res. Dev..

Sub-threshold circuit design with shrinking CMOS devices

Jiajing Wang, Benton H. Calhoun, Randy W. Mann, 2009, 2009 IEEE International Symposium on Circuits and Systems.

The C49 to C54 Phase Transformation in TiSi2 Thin Films

Randy W. Mann, Lawrence A. Clevenger, R. Mann, 1994 .

Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates

Randy W. Mann, Lawrence A. Clevenger, C. Nobili, 1992 .

The C49 to C54-TiSi2 transformation in self-aligned silicide applications

Randy W. Mann, Q. Z. Hong, Lawrence A. Clevenger, 1993 .

Noise margin and leakage in ultra-low leakage SRAM cell design

Terence B. Hook, Matthew J. Breitwisch, Randy W. Mann, 2002 .

Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

Randy W. Mann, T. A. Knotts, Lawrence A. Clevenger, 1995 .

TiSi2 phase transformation characteristics on narrow devices

Randy W. Mann, John E. Bertsch, Glen L. Miles, 1996 .