Feng Li

Dielectric Characteristics of N 2 Gas under Impulse Voltage in a Quasi-Uniform Electric Field

Bok-Hee Lee, Dong-Kyu Kim, Feng Li, 2010 .

MOSFET drain and induced-gate noise modeling and experimental verification for RF IC design

Feng Li, Chih-Hung Chen, Yuhua Cheng, 2004, Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Lin Gu, Zhuo Kang, Zheng Zhang, 2017, Nature Communications.

Low-cost highly sensitive strain sensors for wearable electronics

Yong Li, Feng Li, Shiyao Cao, 2017 .

Stretchable and multifunctional strain sensors based on 3D graphene foams for active and adaptive tactile imaging

Tao Shen, Junjie Qi, Feng Li, 2018, Science China Materials.