Milan Bera

发表

Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget

Yi Liu, Milan Bera, Lwin Min Kyaw, 2014 .

TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs

Chandreswar Mahata, C. K. Maiti, Milan Bera, 2007 .

Direct Nanoscale Observation of Resistance Switching with Au Nano-Dots Embedded Nb 2 O 5 by Scanning Tunneling Microscopy

M. K. Hota, C. K. Maiti, Milan Bera, 2012 .

Current conduction mechanism in TiO2 gate dielectrics

Milan Bera, C. K. Maiti, S. Chakraborty, 2005 .

Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage

Milan Bera, Lwin Min Kyaw, Yi Jie Ngoo, 2014 .

(Invited) White-Light-Induced Annihilation of Percolation Paths in SiO2 and High-k Dielectrics - Prospect for Gate Oxide Reliability Rejuvenation and Optical-Enabled Functions in CMOS Integrated Circuits

Milan Bera, Yu Zhou, Diing Shenp Ang, 2015 .

Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers

C. K. Maiti, Milan Bera, Rabindra N. Das, 2006 .