Eng Fong Chor

发表

Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget

Yi Liu, Milan Bera, Lwin Min Kyaw, 2014 .

Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication

Ying Keung Leung, Eng Fong Chor, A. See, 2000, Other Conferences.

Constant current-stress-induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devices

Hao Gong, Eng Fong Chor, Joseph Xie, 1997, Advanced Lithography.

Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts

Hao Gong, Eng Fong Chor, H. Gong, 2000 .

Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

Eng Fong Chor, Leng Seow Tan, L. Tan, 2007 .

Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage

Milan Bera, Lwin Min Kyaw, Yi Jie Ngoo, 2014 .

Electron-beam irradiation-induced gate oxide degradation

Byung Jin Cho, Eng Fong Chor, Moon Sig Joo, 2000 .

Epitaxial growth of Sc2O3 films on GaN (0001) by pulsed laser deposition

Eng Fong Chor, Leng Seow Tan, Anyan Du, 2007 .