Jie-Jie Zhu

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs

Peng Zhang, Qing Zhu, Xiaowei Zhou, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Xiaohua Ma, Bin Hou, Yue Hao, 2014, Microelectron. Reliab..