Yanning Sun

III–V: Replacing Si or more than Moore?

Yanning Sun, 2010, 2010 Symposium on VLSI Technology.

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors

Shu-Jen Han, Yanning Sun, Zhihong Chen, 2011, IEEE Electron Device Letters.

Enhancement-Mode Buried-Channel MOSFETs With High- Gate Dielectrics

David J. Webb, Stephen R. Forrest, Jean-Pierre Locquet, 2007 .

Scaling of In0.7Ga0.3As buried-channel MOSFETs

Yanning Sun, J. Bucchignano, G. Shahidi, 2008, 2008 IEEE International Electron Devices Meeting.

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Mark J. W. Rodwell, Brian Thibeault, Arthur C. Gossard, 2009 .

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

Keith A. Jenkins, Phaedon Avouris, Yu-Ming Lin, 2010 .

Study of channel length scaling in large-scale graphene FETs

Wilfried Haensch, Shu-Jen Han, Yanning Sun, 2010, 2010 Symposium on VLSI Technology.