Stefan Jakschik

发表

Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

Akira Inoue, Rita Rooyackers, Denis Shamiryan, 2006 .

Memory and method for its preparation

Thomas Hecht, Matthias Goldbach, Andreas Orth, 2005 .

Crystallization behavior of thin ALD-Al2O3 films

Harald Seidl, Uwe Schroeder, Johann W. Bartha, 2003 .

New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAM

Uwe Schroeder, Dirk Manger, Christoph Ludwig, 2009 .

Physical characterization of thin ALD–Al2O3 films

Uwe Schroeder, Johann W. Bartha, G. Dollinger, 2003 .

Physical properties of ALD-Al2O3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors

Uwe Schroeder, Johann W. Bartha, Andreas Bergmaier, 2004 .