V. Carrubba

Characterization of electrical memory effects for complex multi-tone excitations using broadband active baseband load-pull

J. Benedikt, S. Bensmida, F. L. Ogboi, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Continuous-ClassF3 power amplifier mode varying simultaneously first 3 harmonic impedances

M. Schlechtweg, J. Lees, J. Benedikt, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull

M. Beach, J. Lees, J. Benedikt, 2010, 2010 Asia-Pacific Microwave Conference.

The continuous Class-F Mode mode power amplifier

A. L. Clarke, Jonathan Lees, Paul J. Tasker, 2010 .

Dual-band Class-ABJ AlGaN/GaN high power amplifier

M. Schlechtweg, H. Walcher, O. Ambacher, 2012, 2012 7th European Microwave Integrated Circuit Conference.

The benefit of GaN characteristics over LDMOS for linearity improvement using drain modulation in power amplifier system

J. Lees, J. Benedikt, M. Akmal, 2011, 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits.

Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering

H. Walcher, O. Ambacher, E. Ture, 2014, 2014 44th European Microwave Conference.