K. Alavi

A Single Threshold Double Recessed pHEMT Process for Economical Fabrication of High Performance Power Amplifiers and Low Noise Amplifiers at X-Band

K. Kessler, Dain Miller, A. Bertrand, 2001 .

Improvements on Infrared-Camera Calibration for Accurate Surface Temperature Measurements in Arcjet Facilities

S. Gulli, Luca Maddalena, K. Alavi, 2017 .

A Very High Performance, High Yield, and High Throughput Millimeter Wave Power pHEMT Process Technology

A. Platzker, D. Shaw, K. Alavi, 2001 .

Near-single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier

J. Allam, K. Alavi, F. Capasso, 1987, IEEE Electron Device Letters.

Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE

K. Alavi, R. Malik, A. Cho, 1992, IEEE Electron Device Letters.

High-gain Al0.48In0.52As/Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxy

K. Alavi, F. Capasso, F. Capasso, 1983, IEEE Electron Device Letters.

In0.53Ga0.47As FET's with insulator-assisted Schottky gates

J.C.M. Hwang, K. Alavi, A. Cho, 1982, IEEE Electron Device Letters.