Y. T. Yeow

Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

C. T. Hsu, M. M. Lau, Y. T. Yeow, 2001, Microelectron. Reliab..

Inverse modeling of two-dimensional MOSFET dopant profile via capacitance of the source/drain gated diode

Y. T. Yeow, C.Y.-T. Chiang, 2000 .

Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges

Y. T. Yeow, S. J. Oh, Y. Yeow, 1989 .

A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures

Y. T. Yeow, Seog-Ju Oh, Y. Yeow, 1988 .