P. Coppens

Reliability assessment of deep trench isolation structures

M. Tack, P. Moens, P. Coppens, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Innovating SRAM Design for Fast Process Related Defect Recognition and Failure Analysis

P. Coppens, G. Vanhorebeek, E. De Backer, 1999, 29th European Solid-State Device Research Conference.

A high-speed silicon FET for efficient DC-DC power conversion

P. Coppens, F. Bauwens, F. De Pestel, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Plasma process induced damage during via etching on PDMOS transistors

P. Coppens, K. Dhondt, T. Colpaert, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Development of a robust 50V 0.35 /spl mu/m based Smart Power Technology using trench isolation

P. Moens, P. Coppens, H. De Vleeschouwer, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

Deep trench isolation for a 50 V 0.35 /spl mu/m based smart power technology

M. Tack, P. Moens, P. Coppens, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Gassot, M. Tack, P. Moens, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Impact of charging on breakdown in deep trench isolation structures [parasitic MOSFET example]

P. Moens, P. Coppens, F. De Pestel, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

M. Tack, P. Moens, P. Coppens, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).